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|Type:||Artigo de periódico|
|Title:||CVD Diamond growth in the silicon substrates of large area|
|Abstract:||Diamond films were grown through Chemical Vapor Deposition (CVD) in silicon substrates (100) of large area (80 cm(2),), in a hot filament chemical vapor deposition (HFCVD), with growth rates over 1,5 mu m/h. The growth of samples was made with different gaseous fluxes and different methane percentages (CH(4)) in hydrogen (H(2)). The samples were analyzed through optical microscopy, Scanning Electron Microscopy and Raman spectroscopy scattering. Such analyzes showed the presence of a high purity diamond in all samples.|
|Editor:||Escola De Minas|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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