Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/57483
Type: Artigo de periódico
Title: Crystallization behavior of novel silicon boron oxycarbide glasses
Author: Schiavon, MA
Gervais, C
Babonneau, F
Soraru, GD
Abstract: Homogeneous silicon boron oxycarbide (Si-B-O-C) glasses based on SiOxC4-y and BOyC3-y mixed environments were obtained by pyrolysis under inert atmosphere of sol-gel-derived precursors. Their high-temperature structural evolution from 1000degrees to 1500degreesC was followed using XRD, Si-29 and B-11 MAS NMR, and chemical analysis and compared with the behavior of the parent boron-free Si-O-C glasses. The XRD study revealed that, for the Si-O-C and the Si-B-O-C systems, high-temperature annealing led to the crystallization of nanosized beta-SiC into an amorphous SiO2-based matrix. NMR analysis suggested that the beta-SiC crystallization occurred with a consumption of the mixed silicon and boron oxycarbide units. Finally, by comparing the behavior of the Si-O-C and Si-B-O-C glasses, it was shown that the presence of boron increased the crystallization kinetics of beta-SiC.
Country: EUA
Editor: Amer Ceramic Soc
Rights: fechado
Identifier DOI: 10.1111/j.1551-2916.2004.00203.x
Date Issue: 2004
Appears in Collections:Unicamp - Artigos e Outros Documentos

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