Please use this identifier to cite or link to this item:
Type: Artigo de periódico
Title: Controlling the influence of Auger recombination on the performance of quantum-dot light-emitting diodes
Author: Bae, WK
Park, YS
Lim, J
Lee, D
Padilha, LA
McDaniel, H
Robel, I
Lee, C
Pietryga, JM
Klimov, VI
Abstract: Development of light-emitting diodes (LEDs) based on colloidal quantum dots is driven by attractive properties of these fluorophores such as spectrally narrow, tunable emission and facile processibility via solution-based methods. A current obstacle towards improved LED performance is an incomplete understanding of the roles of extrinsic factors, such as non-radiative recombination at surface defects, versus intrinsic processes, such as multicarrier Auger recombination or electron-hole separation due to applied electric field. Here we address this problem with studies that correlate the excited state dynamics of structurally engineered quantum dots with their emissive performance within LEDs. We find that because of significant charging of quantum dots with extra electrons, Auger recombination greatly impacts both LED efficiency and the onset of efficiency roll-off at high currents. Further, we demonstrate two specific approaches for mitigating this problem using heterostructured quantum dots, either by suppressing Auger decay through the introduction of an intermediate alloyed layer, or by using an additional shell that impedes electron transfer into the quantum dot to help balance electron and hole injection.
Country: Inglaterra
Editor: Nature Publishing Group
Rights: fechado
Identifier DOI: 10.1038/ncomms3661
Date Issue: 2013
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
There are no files associated with this item.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.