Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/56757
Type: Artigo de periódico
Title: Micro-Raman analysis of cubic GaN layers grown by MBE on (001) GaAs substrate
Author: Tabata, A
Lima, AP
Leite, JR
Lemos, V
Schikora, D
Schottker, A
Kohler, U
As, DJ
Lischka, K
Abstract: Cubic GaN layers are grown by molecular beam epitaxy on (001) GaAs substrates. Optical micrographs of the GaN epilayers intentionally grown at Ga excess reveal the existence of surface irregularities such as bright rectangular structures, dark dots surrounded by rectangles and dark dots without rectangles. Micro-Raman spectroscopy is used to study the structural properties of these inclusions and of the epilayers in greater detail. We conclude that the observed irregularities are the result of a melting process due to the existence of a liquid Ga phase on the growing surface.
Country: Inglaterra
Editor: Iop Publishing Ltd
Rights: fechado
Identifier DOI: 10.1088/0268-1242/14/4/005
Date Issue: 1999
Appears in Collections:Unicamp - Artigos e Outros Documentos

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