Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/56579
Type: Artigo de periódico
Title: Metal-insulator transition in a disordered two-dimensional electron gas in GaAs-AlGaAs at zero magnetic field
Author: Ribeiro, E
Jaggi, RD
Heinzel, T
Ensslin, K
Medeiros-Ribeiro, G
Petroff, PM
Abstract: A metal-insulator transition in two-dimensional electron gases at B = 0 is found in Ga[Al]As heterostructures, where a high density of self-assembled InAs quantum dots is incorporated just 3 nm below the heterointerface. The transition occurs at resistances around h/e(2) and critical carrier densities of 1.2 X 10(11) cm(-2). Effects of electron-electron interactions are expected to be rather weak in our samples, while disorder plays a crucial role.
Country: EUA
Editor: American Physical Soc
Rights: aberto
Identifier DOI: 10.1103/PhysRevLett.82.996
Date Issue: 1999
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

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