Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/56475
Type: Artigo de periódico
Title: Conductivity dependence on the thickness of hydrogenated, amorphous silicon-carbon films
Author: Koropecki, RR
Arce, RD
Buitrago, RH
Bittencourt, C
Alvarez, F
Abstract: We report experimental results on the dependence of conductivity on thickness in hydrogenated amorphous silicon and hydrogenated amorphous silicon carbon thin film alloys. The analysis of multilayer structures indicates that band bending at the vacuum-him interface accounts for most of the conductivity changes. The film-substrate interface seems to play a minor role in the conductivity experiments. The behavior of the sub-gap absorption coefficient of thin films shows that the material near the interfaces and in the bulk has the same defect density. (C) 1997 Elsevier Science S.A.
Subject: amorphous materials
conductivity
interfaces
silicon carbide
Country: Suíça
Editor: Elsevier Science Sa Lausanne
Rights: fechado
Identifier DOI: 10.1016/S0040-6090(96)09275-9
Date Issue: 1997
Appears in Collections:Unicamp - Artigos e Outros Documentos

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