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|Type:||Artigo de periódico|
|Title:||Binding energy of charged excitons bound to interface defects of semiconductor quantum wells|
|Abstract:||We present a model that takes into account the interface-defects contribution to the binding energy of charged excitons (trions). We use Gaussian defect potentials and one-particle Gaussian basis set. All the Hamiltonian defect terms are analytically calculated for the s-like trial wave functions. The dependence of the binding energy and of the trion size on the quantum-well width and on the defect size are investigated using a variational method for GaAs/Al0.3Ga0.7As quantum wells. We show that even in the case of strictly structural defects the trion is more strongly affected than the exciton.|
|Editor:||American Physical Soc|
|Appears in Collections:||Artigos e Materiais de Revistas Científicas - Unicamp|
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