Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/55474
Type: Artigo de periódico
Title: Binding energy of charged excitons bound to interface defects of semiconductor quantum wells
Author: Dacal, LCO
Ferreira, R
Bastard, G
Brum, JA
Abstract: We present a model that takes into account the interface-defects contribution to the binding energy of charged excitons (trions). We use Gaussian defect potentials and one-particle Gaussian basis set. All the Hamiltonian defect terms are analytically calculated for the s-like trial wave functions. The dependence of the binding energy and of the trion size on the quantum-well width and on the defect size are investigated using a variational method for GaAs/Al0.3Ga0.7As quantum wells. We show that even in the case of strictly structural defects the trion is more strongly affected than the exciton.
Country: EUA
Editor: American Physical Soc
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.65.115325
Date Issue: 2002
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

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