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|Type:||Artigo de periódico|
|Title:||BE INCORPORATION AND SURFACE MORPHOLOGIES IN HOMOEPITAXIAL INP FILMS|
|Abstract:||We have studied the mechanism of Be incorporation in InP homoepitaxial films grown by metalorganic molecular beam epitaxy. The actual Be concentration in the films reaches 1-2X10(19)cm(-3) while the hole concentration saturates at a lower value (similar to 2X10(18)cm(-3) in our case). The measured lattice mismatch between him and substrate depends both on growth temperature and Be flux. The resulting changes in morphology suggest that the excess Be forms microclusters in the films grown at higher temperatures-due to the higher surface mobility, leading to the growth of oval defects. Be rejection to the surface is also observed. The surfaces of samples with no cap layer present a granulation which may be related to the formation of a new phase like Be3P2. (C) 1995 American Institute of Physics.|
|Editor:||Amer Inst Physics|
|Appears in Collections:||Artigos e Materiais de Revistas Científicas - Unicamp|
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