Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/55306
Type: Artigo de periódico
Title: Band-edge modifications due to photogenerated carriers in single p-type delta-doped GaAs layers
Author: Levine, A
da Silva, ECF
Sipahi, GM
Quivy, AA
Scolfaro, LMR
Leite, JR
Dias, IFL
Lauretto, E
de Oliveira, JBB
Meneses, EA
Oliveira, AG
Abstract: The photogenerated carrier-induced band-edge modifications of beryllium single delta-doped GaAs layers com comprising a two-dimensional hole gas (2DHG) were investigated by means of photoluminescence, selective photoluminescence, and photoluminescence excitation spectroscopies. The results show direct evidence for a photoinduced electron confinement effect, which strongly enhances the radiative-recombination probability between electrons and holes of the 2DHG at low temperatures,
Country: EUA
Editor: American Physical Soc
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.59.4634
Date Issue: 1999
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

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