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|Type:||Artigo de periódico|
|Title:||ATOMIC-FORCE MICROSCOPY STUDIES ON VARIOUS TYPES OF PHOTOLUMINESCENT POROUS SILICON|
|Abstract:||The structural characteristics of anodically-etched porous silicon (PS) layers emitting at different energy levels and with various luminescence fatigue strengths, recently classified into types A, B and C are compared using atomic force microscopy. Quantum-size micro-particles have been observed in type A PS within amorphouslike contrast, but only fairly rough amorphous grain-like structures have been observed in type B and C PS. Drastic quenching of photoluminescence in the PS layer after deposition of a capping layer of amorphous silicon is also reported.|
|Editor:||Taylor & Francis Ltd London|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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