Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/54720
Type: Artigo de periódico
Title: Application of alpha-C : H films to masking etching of silicon dioxide
Author: Fissore, A
Alves, MAR
Braga, ED
Cescato, L
Abstract: Amorphous hydrogenated carbon (alpha-C:H) thin films deposited by rf chemical vapor deposition were applied to masking the etching of silicon dioxide (SiO2) by the aqueous solution of fluoridric acid (HF). Films with thickness of approximately 100 nm were successfully patterned on SiO2 by the lift-off process. Then the masked samples were submitted to an aqueous HF solution at room temperature. The inspection showed well-defined etching pattern indicating the high performance of the alpha-C:H for this application. (C) 1999 Elsevier Science Ltd. All rights reserved.
Subject: hydrogenated carbon
fluoridric acid
silicon dioxide
Country: Inglaterra
Editor: Elsevier Advanced Technology
Rights: fechado
Identifier DOI: 10.1016/S0026-2692(99)00018-X
Date Issue: 1999
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

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