Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/54543
Type: Artigo de periódico
Title: Analysis of Be doping of InGaP lattice matched to GaAs
Author: Bettini, J
de Carvalho, MMG
Cotta, MA
Pudenzi, MAA
Frateschi, NC
Silva, A
Cardoso, LP
Landers, R
Abstract: We present a study on the growth of Be-doped InGaP layers lattice matched to GaAs substrates by chemical beam epitaxy. We show that the presence of the dopant affects not only electrical but the structural properties - crystal quality and morphology - as well. For samples grown at higher temperatures, a saturation of the electrical carrier concentration is observed, associated to degradation of surface morphology and crystal quality. Our results suggest that at these higher temperatures the excess of Be atoms - which are not electrically active - are incorporated as microcrystals of Be3P2 which may give rise to defects in the layers. Reducing the growth temperature can alter this scenario, resulting in Be-doped InGaP layers with improved crystal quality, planar morphology and no saturation in the electrical carrier concentration for Be concentrations up to 3 x 10(19) cm(-3). (C) 2000 Elsevier Science B.V. All rights reserved.
Subject: p-type InGaP
Be-doped InGaP by CBE
Be3P2 in InGaP
Be-doped InGaP morphology
Country: Holanda
Editor: Elsevier Science Bv
Rights: fechado
Identifier DOI: 10.1016/S0022-0248(99)00461-3
Date Issue: 2000
Appears in Collections:Unicamp - Artigos e Outros Documentos

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