Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/54484
Type: Artigo de periódico
Title: An optical study of self-assembled InxGa1-xAs/GaAs quantum dots embedded in a two-dimensional electron gas
Author: Ribeiro, E
Cerdeira, F
Brasil, MJSP
Heinzel, T
Ensslin, K
Medeiros-Ribeiro, G
Petroff, PM
Abstract: We studied the low temperature (77 K) photomodulated reflection and transmission as well as the photoluminescence at 2.2 K of a self-assembled InxGa1-xAs quantum dot layer grown on a (100) GaAs substrate in the vicinity of a two-dimensional electron gas. The dot layer was grown without rotation of the substrate in order to achieve a gradual variation of the In concentration along the wafer diameter. This resulted in an increase in the density of quantum dots along the In concentration gradient, which is reflected in a characteristic dependence of the relative intensities of the spectral lines. A consistent assignment of the optical structure observed in all spectra leads to an estimate of the average value of the Fermi energy in the conduction band of the wetting layer (E(F)similar or equal to 13.4 meV). The variation of this Fermi energy along the composition gradient can be obtained from the spectra, and an estimate of the gradient of the density of quantum dots along this direction can be made. A careful comparison of the variation of the critical energy of the different lines suggests that the average quantum dot size depends on the In molar fraction of the alloy, which is seen to vary more or less linearly across the wafer diameter. (C) 2000 American Institute of Physics. [S0021-8979(00)06510-5].
Country: EUA
Editor: Amer Inst Physics
Rights: aberto
Identifier DOI: 10.1063/1.373485
Date Issue: 2000
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

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