Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/54239
Type: Artigo de periódico
Title: AMORPHIZATION OF ION-IMPLANTED LAYERS IN SILICON USING PHOTOACOUSTIC DETECTION
Author: NETO, AP
VARGAS, H
MIRANDA, LCM
Abstract: The influence of ion implantation in the thermal properties of silicon wafers at room temperature is investigated using the photoacoustic technique. It is suggested that the observed decrease of the values of both thermal diffusivity and conductivity, as the implantation dose increases, is due to the amorphization of the implanted layer.
Editor: Amer Inst Physics
Rights: aberto
Identifier DOI: 10.1063/1.104619
Date Issue: 1991
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

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