Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/53902
Type: Artigo de periódico
Title: A theoretical resonant-tunnelling approach to electric-field effects in quasiperiodic Fibonacci GaAs-(Ga,Al)As semiconductor superlattices
Author: Reyes-Gomez, E
Perdomo-Leiva, CA
Oliveira, LE
de Dios-Leyva, M
Abstract: A theoretical resonant-tunnelling approach is used in a detailed study of the electronic and transmission properties of quasiperiodic Fibonacci GaAs-(Ga,Al)As semiconductor superlattices, under applied electric fields. The theoretical scheme is based upon an exact solution of the corresponding Schroedinger equations in different wells and barriers, through the use of Airy functions, and a transfer-matrix technique. The calculated quasibound resonant energies agree quite well with previous theoretical parameter-based results within a tight-binding scheme, in the particular case of isolated Fibonacci building blocks. Theoretical resonant-tunnelling results for S-4 and S-5 generations of the quasiperiodic Fibonacci superlattice reveal the occurrence of anticrossings of the resonant levels with applied electric fields, together with the conduction-and valence-level wave function localization properties and electric-field-induced migration to specific regions of the semiconductor quasiperiodic heterostructure. Finally, theoretical resonant-tunnelling calculations for the interband transition energies are shown to be in quite good quantitative agreement with previously reported experimental photocurrent measurements.
Country: Inglaterra
Editor: Iop Publishing Ltd
Rights: fechado
Identifier DOI: 10.1088/0953-8984/10/16/009
Date Issue: 1998
Appears in Collections:Unicamp - Artigos e Outros Documentos

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