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|Type:||Artigo de periódico|
|Title:||A contribution of vibrationally excited Cl-2 molecules to GaAs reactive ion etching in Cl-2/Ar|
|Abstract:||The experimental results on GaAs RIE in Cl-2/Ar are considered within the framework of the ion-neutral synergy model. It has been shown, that the model gives a good agreement with the etch rate data obtained for low Cl-2 partial pressure, but fails at the increased chlorine percentage. A possible contribution of vibrationally excited Cl-2 molecules to GaAs etch rate has been considered.|
|Subject:||reactive ion etching|
|Editor:||Japan J Applied Physics|
|Appears in Collections:||Artigos e Materiais de Revistas Científicas - Unicamp|
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