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|Type:||Artigo de periódico|
|Title:||Magnetoexcitons bound to ionized-donor impurities in GaAs/AlxGa1-xAs quantum wells|
|Abstract:||The binding energy of Wannier excitons bound to ionized-donor impurities, D+, in GaAs/AlxGa1-xAs quantum-wells, is studied using the effective-mass approximation within a variational approach, as a function of the well width for different barrier heights and growth-direction applied magnetic fields. Our calculations are devoted to heavy-hole magnetoexcitons. As expected, we found that the binding energy of a heavy-hole exciton bound to a donor-ionized impurity increases with the Al concentration, as well as with the applied magnetic field. Otherwise, we found that it is higher than the corresponding for heavy-hole excitons without impurities reported by other authors. Moreover we found that the binding energy of the heavy-hole exciton bound to a donor-ionized impurity is higher (lower) for larger (smaller) quantum well width. Finally we found that our results are in very good agreement when we compare with experimental and theoretical reports. (c) 2010 Elsevier B.V. All rights reserved.|
|Editor:||Elsevier Science Bv|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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