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dc.contributor.CRUESPUniversidade Estadual de Campinaspt_BR
dc.typeArtigo de periódicopt_BR
dc.titleA comprehensive study of the influence of the stoichiometry on the physical properties of TiOx films prepared by ion beam depositionpt_BR
dc.contributor.authorMarchi, MCpt_BR
dc.contributor.authorBilmes, SApt_BR
dc.contributor.authorRibeiro, CTMpt_BR
dc.contributor.authorOchoa, EApt_BR
dc.contributor.authorKleinke, Mpt_BR
dc.contributor.authorAlvarez, Fpt_BR
unicamp.author.emailalvarez@ifi.unicamp.brpt_BR
unicamp.authorClaudia Marchi, M. Bilmes, Sara A. Univ Buenos Aires, Fac Ciencias Exactas & Nat, INQUIMAE DQIAyQF, Buenos Aires, DF, Argentinapt_BR
unicamp.authorRibeiro, C. T. M. USP, Inst Fis, LTF, BR-13560250 Sao Carlos, SP, Brazilpt_BR
unicamp.authorOchoa, E. A. Kleinke, M. Alvarez, F. Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP, Brazilpt_BR
dc.subjectatomic force microscopypt_BR
dc.subjectFourier transform spectrapt_BR
dc.subjectinfrared spectrapt_BR
dc.subjection beam assisted depositionpt_BR
dc.subjectRaman spectrapt_BR
dc.subjectsolid-state phase transformationspt_BR
dc.subjectstoichiometrypt_BR
dc.subjecttitanium compoundspt_BR
dc.subjectultraviolet photoelectron spectrapt_BR
dc.subjectwide band gap semiconductorspt_BR
dc.subjectX-ray photoelectron spectrapt_BR
dc.subject.wosTitanium-oxide Filmspt_BR
dc.subject.wosRay Photoelectron-spectroscopypt_BR
dc.subject.wosThin-filmspt_BR
dc.subject.wosNanocrystalline Tio2pt_BR
dc.subject.wosElectronic-structurept_BR
dc.subject.wosVapor-depositionpt_BR
dc.subject.wosSurfacept_BR
dc.subject.wosDioxidept_BR
dc.subject.wosRutilept_BR
dc.subject.wosAnatasept_BR
dc.description.abstractA comprehensive study of nonstoichiometry titanium oxide thin films (TiOx, 0.3 <= x <= 2) prepared by ion beam deposition technique is reported. The physical properties of the material are studied by ultraviolet and x-ray photoelectron, Raman, and Fourier transform infrared spectroscopies, and atomic force microscopy. An abrupt transition from metallic characteristics to a wide gap semiconductor is observed in a very narrow range of oxygen variation. Concomitantly with this change the crystal structure and morphology suffer remarkable physical properties modifications. This transformation is ascribed to surface-volume energy minimization due to the influence of oxygen determining the size of the TiO2 particles during coalescence. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3481442]pt
dc.relation.ispartofJournal Of Applied Physicspt_BR
dc.relation.ispartofabbreviationJ. Appl. Phys.pt_BR
dc.publisher.cityMelvillept_BR
dc.publisher.countryEUApt_BR
dc.publisherAmer Inst Physicspt_BR
dc.date.issued2010pt_BR
dc.date.monthofcirculationSEP 15pt_BR
dc.identifier.citationJournal Of Applied Physics. Amer Inst Physics, v. 108, n. 6, 2010.pt_BR
dc.language.isoenpt_BR
dc.description.volume108pt_BR
dc.description.issuenumber6pt_BR
dc.rightsabertopt_BR
dc.sourceWeb of Sciencept_BR
unicamp.cruespUSPpt_BR
dc.identifier.issn0021-8979pt_BR
dc.identifier.wosidWOS:000282646400184pt_BR
dc.identifier.doi10.1063/1.3481442pt_BR
dc.description.sponsorshipFundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)pt_BR
dc.description.sponsorshipANPCyT [PICT-0633973]pt_BR
dc.description.sponsorshipCONICET [PIP 2533]pt_BR
dc.description.sponsorshipUBACyT [X-003]pt_BR
dc.description.sponsorship1Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)pt_BR
dc.description.sponsordocumentnumberFAPESP [05/53926]pt
dc.description.sponsordocumentnumberANPCyT [PICT-0633973]pt
dc.description.sponsordocumentnumberCONICET [PIP 2533]pt
dc.description.sponsordocumentnumberUBACyT [X-003]pt
dc.date.available2014-11-19T05:14:26Z
dc.date.available2015-11-26T17:57:47Z-
dc.date.accessioned2014-11-19T05:14:26Z
dc.date.accessioned2015-11-26T17:57:47Z-
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dc.description.provenanceMade available in DSpace on 2015-11-26T17:57:47Z (GMT). No. of bitstreams: 2 WOS000282646400184.pdf: 970145 bytes, checksum: 0c8f18d21e7cf1032e7d9025fa6c808f (MD5) WOS000282646400184.pdf.txt: 46001 bytes, checksum: d0f49f7e47dc50ac3994f05345d48b05 (MD5) Previous issue date: 2010en
dc.identifier.urihttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/53005pt_BR
dc.identifier.urihttp://www.repositorio.unicamp.br/handle/REPOSIP/53005
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/53005-
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