Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/53005
Type: Artigo de periódico
Title: A comprehensive study of the influence of the stoichiometry on the physical properties of TiOx films prepared by ion beam deposition
Author: Marchi, MC
Bilmes, SA
Ribeiro, CTM
Ochoa, EA
Kleinke, M
Alvarez, F
Abstract: A comprehensive study of nonstoichiometry titanium oxide thin films (TiOx, 0.3 <= x <= 2) prepared by ion beam deposition technique is reported. The physical properties of the material are studied by ultraviolet and x-ray photoelectron, Raman, and Fourier transform infrared spectroscopies, and atomic force microscopy. An abrupt transition from metallic characteristics to a wide gap semiconductor is observed in a very narrow range of oxygen variation. Concomitantly with this change the crystal structure and morphology suffer remarkable physical properties modifications. This transformation is ascribed to surface-volume energy minimization due to the influence of oxygen determining the size of the TiO2 particles during coalescence. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3481442]
Subject: atomic force microscopy
Fourier transform spectra
infrared spectra
ion beam assisted deposition
Raman spectra
solid-state phase transformations
stoichiometry
titanium compounds
ultraviolet photoelectron spectra
wide band gap semiconductors
X-ray photoelectron spectra
Country: EUA
Editor: Amer Inst Physics
Rights: aberto
Identifier DOI: 10.1063/1.3481442
Date Issue: 2010
Appears in Collections:Unicamp - Artigos e Outros Documentos

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