Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/52898
Type: Artigo de periódico
Title: Magnetic-field effects in defect-controlled ferromagnetic Ga1-xMnxAs semiconductors
Author: dos Santos, RR
Castro, JDE
Oliveira, LE
Abstract: We have studied the magnetic-field and concentration dependences of the magnetizations of the hole and Mn subsystems in diluted ferromagnetic semiconductor Ga1-xMnxAs. A mean-field approximation to the hole-mediated interaction is used, in which the hole concentration p(x) is parametrized in terms of a fitting (of the hole effective mass and hole/local moment coupling) to experimental data on the T-c critical temperature. The dependence of the magnetizations with x, for a given temperature, presents a sharply peaked structure; with maxima increasing with applied magnetic field, which indicates that application to diluted-magnetic-semiconductor devices would require quality control of the Mn-doping composition. We also compare various experimental data for T-c(x) and p(x) on different Ga1-xMnxAs samples and stress the need of further detailed, experimental work to assure that the experimental measurements are reproducible. (C) 2003 American Institute of Physics. [DOI: 10.1063/1.1534622].
Country: EUA
Editor: Amer Inst Physics
Rights: aberto
Identifier DOI: 10.1063/1.1534622
Date Issue: 2003
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

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