Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/52492
Type: Artigo
Title: LO phonon effective temperature in highly excited GaAs
Author: Castro, A. R. B. de
Turtelli, R. S.
Abstract: We report results for measurements of the ratio of Stokes to anti-Stokes intensities in the LO phonon Raman line of GaAs excited with 1.06 ?m radiation that are in conflict with data reported earlier by other workers. It is pointed out that these earlier data are inconsistent both with the model proposed to explain them and with an order-of-magnitude estimate for the density of LO phonons obtainable under the conditions of the experiment. Our data, where no dependence of the ratio of Stokes to anti-Stokes intensities upon peak incident flux is detectable, are consistent with the theory
We report results for measurements of the ratio of Stokes to anti-Stokes intensities in the LO phonon Raman line of GaAs excited with 1.06 μm radiation that are in conflict with data reported earlier by other workers. It is pointed out that these earlier data are inconsistent both with the model proposed to explain them and with an order-of-magnitude estimate for the density of LO phonons obtainable under the conditions of the experiment. Our data, where no dependence of the ratio of Stokes to anti-Stokes intensities upon peak incident flux is detectable, are consistent with the theory.
Subject: Arsenieto de gálio
Semicondutores de arsenieto de gálio
Country: Reino Unido
Editor: Pergamon Press
Citation: Solid State Communications. Pergamon-elsevier Science Ltd, v. 32, n. 9, n. 819, n. 822, 1979.
Rights: fechado
Identifier DOI: 10.1016/0038-1098(79)90762-2
Address: https://www.sciencedirect.com/science/article/pii/0038109879907622
Date Issue: 1979
Appears in Collections:IFGW - Artigos e Outros Documentos

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