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dc.contributor.CRUESPUNIVERSIDADE ESTADUAL DE CAMPINASpt_BR
dc.identifier.isbn978-147994696-9pt_BR
dc.contributor.authorunicampCésar, Rodrigo Reigota-
dc.contributor.authorunicampBarros, Angélica Denardi de-
dc.contributor.authorunicampDoi, Ioshiaki-
dc.contributor.authorunicampDiniz, José Alexandre-
dc.contributor.authorunicampSwart, Jacobus Willibrordus-
dc.typeArtigopt_BR
dc.titleThin titanium oxide films obtained by RTP and by Sputteringpt_BR
dc.contributor.authorCésar, R. R.-
dc.contributor.authorBarros, A. D.-
dc.contributor.authorDoi, I.-
dc.contributor.authorDiniz, J. A.-
dc.contributor.authorSwart, J. W.-
dc.subjectCrepitação (Física)pt_BR
dc.subject.otherlanguageSputtering (Physics)pt_BR
dc.description.abstractIn this paper, two methods to obtain titanium oxide (TiO2) thin films are compared. In the first method metallic titanium (Ti) is deposited by sputtering and then oxidized by rapid thermal process (RTP) in an oxygen atmosphere to form the TiO2 thin films. The second method consists in TiO2 deposition by reactive sputtering. Structural characterization of the prepared samples shows the rutile crystal structure for both films, but TiO2 thin film deposited by sputtering also presented anatase crystal structure. Capacitors were fabricated and the electrical characterization of TiO2 films realized in order to determine which method forms the best dielectric film, defined by high dielectric constant value (high-k), lower charge density (Q0/q) and flat-band voltage (VFB) around -0.9V.pt_BR
dc.relation.ispartof2014 29th Symposium on Microelectronics Technology and Devices: Chip in Aracaju, SBMicro 2014pt_BR
dc.publisherInstitute of Electrical and Electronics Engineerspt_BR
dc.date.issued2014-
dc.language.isoengpt_BR
dc.rightsFechadopt_BR
dc.sourceSCOPUSpt_BR
dc.identifier.doi10.1109/SBMicro.2014.6940120pt_BR
dc.identifier.urlhttps://ieeexplore.ieee.org/document/6940120pt_BR
dc.description.sponsorshipCONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO - CNPQpt_BR
dc.description.sponsorshipFUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULO - FAPESPpt_BR
dc.description.sponsordocumentnumbersem informaçãopt_BR
dc.date.available2020-12-30T10:16:50Z-
dc.date.accessioned2020-12-30T10:16:50Z-
dc.description.provenanceSubmitted by Sanches Olivia (olivias@unicamp.br) on 2020-12-30T10:16:50Z No. of bitstreams: 0. Added 1 bitstream(s) on 2021-02-25T19:55:39Z : No. of bitstreams: 1 2-s2.0-84912074144.pdf: 571836 bytes, checksum: 73888e99adb21d463c7d38401432bdee (MD5)en
dc.description.provenanceMade available in DSpace on 2020-12-30T10:16:50Z (GMT). No. of bitstreams: 0 Previous issue date: 2014en
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/353410-
dc.description.conferencenome29th Symposium on Microelectronics Technology and Devices, SBMicro 2014pt_BR
dc.contributor.departmentsem informaçãopt_BR
dc.contributor.departmentsem informaçãopt_BR
dc.contributor.departmentDepartamento de Semicondutores, Instrumentos e Fotônicapt_BR
dc.contributor.departmentDepartamento de Semicondutores, Instrumentos e Fotônicapt_BR
dc.contributor.departmentDepartamento de Semicondutores, Instrumentos e Fotônicapt_BR
dc.contributor.unidadeFaculdade de Engenharia Elétrica e de Computaçãopt_BR
dc.subject.keywordDielectric constantpt_BR
dc.subject.keywordSputteringpt_BR
dc.subject.keywordTitanium oxidept_BR
dc.identifier.source2-s2.0-84912074144pt_BR
dc.creator.orcid0000-0002-6671-1230pt_BR
dc.creator.orcidsem informaçãopt_BR
dc.creator.orcidsem informaçãopt_BR
dc.creator.orcid0000-0003-3274-3303pt_BR
dc.creator.orcidsem informaçãopt_BR
dc.type.formArtigo de eventopt_BR
dc.identifier.articleid6940120pt_BR
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