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|Title:||Thin titanium oxide films obtained by RTP and by Sputtering|
|Author:||César, R. R.|
Barros, A. D.
Diniz, J. A.
Swart, J. W.
|Abstract:||In this paper, two methods to obtain titanium oxide (TiO2) thin films are compared. In the first method metallic titanium (Ti) is deposited by sputtering and then oxidized by rapid thermal process (RTP) in an oxygen atmosphere to form the TiO2 thin films. The second method consists in TiO2 deposition by reactive sputtering. Structural characterization of the prepared samples shows the rutile crystal structure for both films, but TiO2 thin film deposited by sputtering also presented anatase crystal structure. Capacitors were fabricated and the electrical characterization of TiO2 films realized in order to determine which method forms the best dielectric film, defined by high dielectric constant value (high-k), lower charge density (Q0/q) and flat-band voltage (VFB) around -0.9V.|
|Editor:||Institute of Electrical and Electronics Engineers|
|Appears in Collections:||FEEC - Artigos e Outros Documentos|
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