Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/353347
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dc.contributor.CRUESPUNIVERSIDADE ESTADUAL DE CAMPINASpt_BR
dc.contributor.authorunicampSilveira, José Valdenir da-
dc.contributor.authorunicampSavu, Raluca-
dc.contributor.authorunicampCanesqui, Mara Adriana-
dc.contributor.authorunicampAlves, Oswaldo Luiz-
dc.contributor.authorunicampSwart, Jacobus Willibrordus-
dc.contributor.authorunicampMoshkalev, Stanislav-
dc.typeArtigopt_BR
dc.titleImprovement of electrical and thermal contacts between carbon nanotubes and metallic electrodes by laser annealingpt_BR
dc.contributor.authorSilveira, J. V.-
dc.contributor.authorSavu, R.-
dc.contributor.authorCanesqui, M. A.-
dc.contributor.authorAlves, O. L.-
dc.contributor.authorFilho, J. Mendes-
dc.contributor.authorSwart, J. W.-
dc.contributor.authorFilho, A. G. Souza-
dc.contributor.authorMoshkalev, S. A.-
dc.subjectNanotubos de carbonopt_BR
dc.subject.otherlanguageCarbon nanotubespt_BR
dc.description.abstractA new approach for improving electrical and thermal contacts between multi-wall carbon nanotubes (MWCNTs) and metal electrodes by localized laser heating is presented in this work. The nanotubes were suspended, using the dielectrophoresis technique, over a gap of 1 μm width and 5 μm depth connecting the ends of the patterned electrodes. Subsequently, the as deposited nanotubes were directly heated, in ambient atmosphere, by a focused laser beam, which was also used for exciting the Raman spectra of the nanotubes. The changes in the vibrational frequencies were used to estimate the local temperature that was controlled by the incident laser power density. The changes in the nanotubes due to laser heating were evaluated by using scanning electron microscopy, Raman spectroscopy and electrical measurements. The method was employed for improving the electrical contacts between suspended MWCNTs and different electrodes (W, Ti and Au). The reduction in the electrical resistance was up to three orders of magnitude, resulting in contact resistivity as low as ∼0.1–1 kΩ · μm2, with the lowest values being obtained for Au electrodes. The main advantage of this method, when compared with traditional and rapid thermal annealing, is that the thermal treatment is localized in a small region, thus allowing the processing of circuits composed of different materials, whereby each process can be individually controlledpt_BR
dc.relation.ispartofJournal of nanoelectronics and optoelectronicspt_BR
dc.relation.ispartofabbreviationJ. nanoelectron. optoelectron.pt_BR
dc.publisher.cityValenciapt_BR
dc.publisher.countryEstados Unidospt_BR
dc.publisherAmerican Scientificpt_BR
dc.date.issued2014-
dc.date.monthofcirculationJunept_BR
dc.language.isoengpt_BR
dc.description.volume9pt_BR
dc.description.issuenumber3pt_BR
dc.description.firstpage374pt_BR
dc.description.lastpage380pt_BR
dc.rightsFechadopt_BR
dc.sourceSCOPUSpt_BR
dc.identifier.issn1555-130Xpt_BR
dc.identifier.eissn1555-1318pt_BR
dc.identifier.doi10.1166/jno.2014.1599pt_BR
dc.identifier.urlhttps://www.ingentaconnect.com/content/asp/jno/2014/00000009/00000003/art00009;jsessionid=2amqnt15n3e3d.x-ic-live-03pt_BR
dc.date.available2020-12-21T17:44:02Z-
dc.date.accessioned2020-12-21T17:44:02Z-
dc.description.provenanceSubmitted by Sanches Olivia (olivias@unicamp.br) on 2020-12-21T17:44:02Z No. of bitstreams: 0en
dc.description.provenanceMade available in DSpace on 2020-12-21T17:44:02Z (GMT). No. of bitstreams: 0 Previous issue date: 2014en
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/353347-
dc.contributor.departmentsem informaçãopt_BR
dc.contributor.departmentsem informaçãopt_BR
dc.contributor.departmentsem informaçãopt_BR
dc.contributor.departmentDepartamento de Química Inorgânicapt_BR
dc.contributor.departmentDepartamento de Semicondutores, Instrumentos e Fotônicapt_BR
dc.contributor.departmentsem informaçãopt_BR
dc.contributor.unidadeCentro de Componentes Semicondutores e Nanotecnologiaspt_BR
dc.contributor.unidadeCentro de Componentes Semicondutores e Nanotecnologiaspt_BR
dc.contributor.unidadeCentro de Componentes Semicondutores e Nanotecnologiaspt_BR
dc.contributor.unidadeInstituto de Químicapt_BR
dc.contributor.unidadeFaculdade de Engenharia Elétrica e de Computaçãopt_BR
dc.contributor.unidadeCentro de Componentes Semicondutores e Nanotecnologiaspt_BR
dc.subject.keywordLaser treatmentpt_BR
dc.subject.keywordLocal annealingpt_BR
dc.subject.keywordNanomaterialspt_BR
dc.subject.keywordElectrical contactpt_BR
dc.identifier.source2-s2.0-84918775718pt_BR
dc.creator.orcid0000-0003-4364-7739pt_BR
dc.creator.orcid0000-0001-9866-3598pt_BR
dc.creator.orcid0000-0002-3202-0394pt_BR
dc.creator.orcid0000-0002-1518-2092pt_BR
dc.creator.orcidsem informaçãopt_BR
dc.creator.orcid0000-0002-6973-506Xpt_BR
dc.type.formArtigopt_BR
dc.description.otherSponsorshipsem informaçãopt_BR
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