Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/348352
Type: Artigo
Title: Preparation and characterization of Cd2Nb2O7 thin films on Si substrates
Author: Ronconi, Célia M.
Gonçalves, Débora
Suvorova, Nathalia
Alves, Oswaldo L.
Irene, Eugene A.
Abstract: Thin Cd2Nb2O7 films were grown on single-crystal p-type SiO2/Si substrates by the metallo-organic decomposition (MOD) technique. The films were investigated by X-ray diffraction, X-ray energy-dispersive spectroscopy, and field emission scanning electron microscopy, and showed a single phase (cubic pyrochlore), a crack-free spherical grain structure, and nanoparticles with a mean size of about 68 nm. A Cauchy model was also used in order to obtain the thickness and index of refraction of the stack layers (transparent layer/SiO2/Si) by spectroscopic ellipsometry (SE). The dielectric constant (K) of the films was calculated to be about 25 from the capacitance–voltage (C–V) measurements
Subject: Nanoestrutura
Country: Reino Unido
Editor: Elsevier
Rights: Fechado
Identifier DOI: 10.1016/j.jpcs.2008.10.006
Address: https://www.sciencedirect.com/science/article/pii/S0022369708004721
Date Issue: 2009
Appears in Collections:IQ - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
000262558900037.pdf925.67 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.