Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/345863
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dc.contributor.CRUESPUNIVERSIDADE ESTADUAL DE CAMPINASpt_BR
dc.contributor.authorunicampPascon, Aline Maria-
dc.contributor.authorunicampDiniz, José Alexandre-
dc.typeArtigopt_BR
dc.titleExperimental and theoretical investigation of the superior contact properties of dielectrophoretically processed graphene and tantalum nitride electrodespt_BR
dc.contributor.authorPascon, A. M.-
dc.contributor.authorSouza, J. F.-
dc.contributor.authorFonseca, L. R. C.-
dc.contributor.authorDiniz, J. A.-
dc.subjectTransistores de efeito de campopt_BR
dc.subjectTeoria do funcional de densidadept_BR
dc.subjectGrafenopt_BR
dc.subject.otherlanguageDensity functional theorypt_BR
dc.subject.otherlanguageField effect transistorspt_BR
dc.subject.otherlanguageGraphenept_BR
dc.description.abstractWe have explored the dielectrophoretic process (DEP) to reach large scale integration of field effect transistors based on multilayer graphene (GraFET) deposited between source and drain metal electrodes. In our devices graphene lays on top of a TaOx gate dielectric deposited on an n_silicon substrate, which is used as the back gate electrode, while the metal electrodes are made of TaN. These GraFETs reached a maximum transconductance of -19 mS/mm, which is higher than in silicon MOSFETs. To explain the origin of such good performance at the atomic level, ab initio calculations were conducted assuming two different models of the graphene/TaN interface: Ta- and N-terminated delta-TaN[111] surfaces with one, two, three, and four layers of graphene on top. We have found that all graphene layers are considerably deformed due to strong interaction with both metal surfaces, and remain non-planar up to the fourth layer. We have also found that, except for the first graphene layer on TaN, all other layers display the Dirac cones in their locally projected density of states (PDOS). The reason for the absence of the Dirac cones in the first layer, an indication of poor conductance for monolayer graphene on TaN, is the metal induced surface states and not graphene deformation. Finally, due to the large work function of N-terminated TaN, the first few graphene layers closest to the interface are strongly p-doped, while for the Ta-terminated TaN which has low work function the first few graphene layers are slightly n-doped. The better adherence of graphene on N-terminated TaN and the strong p-doping of the interfacial graphene layers may explain the measured low contact resistancept_BR
dc.relation.ispartofPhysica status solidi. B, basic solid state physicspt_BR
dc.relation.ispartofabbreviationPhys. status solidi Bpt_BR
dc.publisher.cityWeinheimpt_BR
dc.publisher.countryAlemanhapt_BR
dc.publisherWileypt_BR
dc.date.issued2015-
dc.date.monthofcirculationApr.pt_BR
dc.language.isoengpt_BR
dc.description.volume252pt_BR
dc.description.issuenumber4pt_BR
dc.description.firstpage765pt_BR
dc.description.lastpage772pt_BR
dc.rightsFechadopt_BR
dc.sourceWOSpt_BR
dc.identifier.issn0370-1972pt_BR
dc.identifier.eissn1521-3951pt_BR
dc.identifier.doi10.1002/pssb.201451377pt_BR
dc.identifier.urlhttps://onlinelibrary.wiley.com/doi/full/10.1002/pssb.201451377pt_BR
dc.description.sponsorshipCOORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIOR - CAPESpt_BR
dc.description.sponsorshipFUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULO - FAPESPpt_BR
dc.description.sponsorshipCONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO - CNPQpt_BR
dc.description.sponsordocumentnumbernão tempt_BR
dc.description.sponsordocumentnumbernão tempt_BR
dc.description.sponsordocumentnumbernão tempt_BR
dc.date.available2020-07-21T19:44:34Z-
dc.date.accessioned2020-07-21T19:44:34Z-
dc.description.provenanceSubmitted by Mariana Aparecida Azevedo (mary1@unicamp.br) on 2020-07-21T19:44:34Z No. of bitstreams: 0. Added 1 bitstream(s) on 2021-01-08T19:02:24Z : No. of bitstreams: 1 000352643900017.pdf: 1094991 bytes, checksum: 5e1b65f00349b3f70c9a8ab9ac06381b (MD5)en
dc.description.provenanceMade available in DSpace on 2020-07-21T19:44:34Z (GMT). No. of bitstreams: 0 Previous issue date: 2015en
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/345863-
dc.contributor.departmentsem informaçãopt_BR
dc.contributor.departmentDepartamento de Semicondutores, Instrumentos e Fotônicapt_BR
dc.contributor.unidadeFaculdade de Engenharia Elétrica e de Computaçãopt_BR
dc.subject.keywordMetal contactspt_BR
dc.identifier.source000352643900017pt_BR
dc.creator.orcid0000-0003-0547-2472pt_BR
dc.creator.orcid0000-0003-3274-3303pt_BR
dc.type.formArtigo originalpt_BR
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