Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/345835
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dc.contributor.CRUESPUNIVERSIDADE ESTADUAL DE CAMPINASpt_BR
dc.contributor.authorunicampCésar, Rodrigo Reigota-
dc.contributor.authorunicampPascon, Aline Maria-
dc.contributor.authorunicampDoi, Ioshiaki-
dc.contributor.authorunicampDiniz, José Alexandre-
dc.typeArtigopt_BR
dc.titleElectrolyte-insulator-semiconductor devices with different integrated reference electrodes for pH detectionpt_BR
dc.contributor.authorCésar, Rodrigo Reigota-
dc.contributor.authorPascon, Aline Maria-
dc.contributor.authorDoi, Ioshiaki-
dc.contributor.authorDiniz, José Alexandre-
dc.subjectSensorpt_BR
dc.subjectEspectroscopia Ramanpt_BR
dc.subject.otherlanguageRaman spectroscopypt_BR
dc.subject.otherlanguageSensorpt_BR
dc.description.abstractElectrolyte-insulator-semiconductor (EIS) devices were fabricated with different integrated reference electrodes, including aluminum (Al), alumina (Al2O3)/Al, titanium nitride (TiN), and graphene/TiN. A titanium oxide (TiO2) film as a gate dielectric and pH sensitive membrane was used in all EIS devices. Structural characterization by Raman spectroscopy indicated that the TiO2 film comprised 20% anatase and 80% rutile crystalline phases and was an appropriate gate dielectric for EIS and ion-sensitive field-effect transistor (ISFET) device applications. Capacitance versus voltage (C-V) measurements were carried out with solutions with pH values of 4, 7, and 10 dripped on the EIS devices. The C-V curves produced the flat-band voltages (VFB) for each solution, whose dependence on the pH value determined the pH sensitivity of EIS device. The best results in terms of the chemical stability and a pH sensitivity of 13mV/pH were exhibited by the TiN reference electrode, which can be integrated in ISFET (or EIS) devices with monolithic complementary metal-oxide-semiconductor applications. Published by the AVSpt_BR
dc.relation.ispartofJournal of vacuum science and technology. part B. nanotechnology & microelectronicspt_BR
dc.relation.ispartofabbreviationJ. vac. sci. technol. Bpt_BR
dc.publisher.cityMelville, NYpt_BR
dc.publisher.countryEstados Unidospt_BR
dc.publisherAIP Publishingpt_BR
dc.date.issued2018-
dc.language.isoengpt_BR
dc.description.volume36pt_BR
dc.description.issuenumber3pt_BR
dc.description.issuespecialAVS 64pt_BR
dc.rightsFechadopt_BR
dc.sourceWOSpt_BR
dc.identifier.issn2166-2746pt_BR
dc.identifier.eissn2166-2754pt_BR
dc.identifier.doi10.1116/1.5022160pt_BR
dc.identifier.urlhttps://avs.scitation.org/doi/full/10.1116/1.5022160pt_BR
dc.description.sponsorshipCOORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL DE NÍVEL SUPERIOR - CAPESpt_BR
dc.description.sponsorshipCONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO - CNPQpt_BR
dc.description.sponsordocumentnumbernão tempt_BR
dc.description.sponsordocumentnumbernão tempt_BR
dc.date.available2020-07-21T15:36:44Z-
dc.date.accessioned2020-07-21T15:36:44Z-
dc.description.provenanceSubmitted by Mariana Aparecida Azevedo (mary1@unicamp.br) on 2020-07-21T15:36:44Z No. of bitstreams: 0. Added 1 bitstream(s) on 2021-01-08T19:02:16Z : No. of bitstreams: 1 000432972200006.pdf: 1180526 bytes, checksum: adba137177d706afacf459cb26919295 (MD5)en
dc.description.provenanceMade available in DSpace on 2020-07-21T15:36:44Z (GMT). No. of bitstreams: 0 Previous issue date: 2018en
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/345835-
dc.contributor.departmentsem informaçãopt_BR
dc.contributor.departmentsem informaçãopt_BR
dc.contributor.departmentsem informaçãopt_BR
dc.contributor.departmentDepartamento de Semicondutores, Instrumentos e Fotônicapt_BR
dc.contributor.unidadeFaculdade de Engenharia Elétrica e de Computaçãopt_BR
dc.subject.keywordElectrolyte-insulator-semiconductor devicespt_BR
dc.identifier.source000432972200006pt_BR
dc.creator.orcid0000-0002-6671-1230pt_BR
dc.creator.orcid0000-0003-0547-2472pt_BR
dc.creator.orcidsem informaçãopt_BR
dc.creator.orcid0000-0003-3274-3303pt_BR
dc.type.formArtigopt_BR
dc.identifier.articleid03E106pt_BR
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