Please use this identifier to cite or link to this item:
|Type:||Artigo de periódico|
|Title:||Strained In1-xGaxAsyP1-y/InP quantum well heterostructures grown by low-pressure metalorganic vapor phase epitaxy|
|Author:||Carvalho Jr, Wilson de|
Bernussi, Ayrton André
Furtado, Mário Tosi
Gobbi, Ângelo Luiz
Cotta, Mônica A.
|Abstract:||We have investigated the optical and the structural properties of strained In1-xGaxAsyP1-y/InP and strain compensated In1-xGaxAsyP1-y/In1-zGazAsqP1-q/InP multi-quantum well heterostructures grown by low-pressure metalorganic vapor phase epitaxy at different growth conditions. Our results indicate an increase of the compositional fluctuation of quaternary materials as the alloy composition moves from the outer spinodal isotherm into the miscibility gap region. In1-xGaxAsyP1-y layers grown at high tensile strained values exhibit a three-dimensional-like growth mode. Strain compensated structures revealed the presence of a broad photoluminescence emission band below the fundamental quantum well transition, well defined elongated features along the  direction and interface undulations. All these effects were found to be strongly dependent on the growth temperature and the number of wells.|
multiple quantum wells
|Editor:||ABM, ABC, ABPol|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
Files in This Item:
|S1516-14391999000200002.pdf||2.01 MB||Adobe PDF||View/Open|
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.