Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/344975
Type: Artigo
Title: Strain-gradient position mapping of semiconductor quantum dots
Author: Assis, P.-L. de
Yeo, I.
Gloppe, A.
Nguyen, H. A.
Tumanov, D.
Dupont-Ferrier, E.
Malik, N. S.
Dupuy, E.
Claudon, J.
Gérard, J. M.
Auffèves, A.
Arcizet, O.
Richard, M.
Poizat, J.-P.
Abstract: We introduce a nondestructive method to determine the position of randomly distributed semiconductor quantum dots (QDs) integrated in a solid photonic structure. By setting the structure in an oscillating motion, we generate a large stress gradient across the QDs plane. We then exploit the fact that the QDs emission frequency is highly sensitive to the local material stress to map the position of QDs deeply embedded in a photonic wire antenna with an accuracy ranging from +/- 35 nm down to +/- 1 nm. In the context of fast developing quantum technologies, this technique can be generalized to different photonic nanostructures embedding any stress-sensitive quantum emitters.
Subject: Pontos quânticos
Semicondutores
Nanoestrutura
Quantum dots
Semiconductors
Nanostructures
Country: Estados Unidos
Editor: American Physical Society
Rights: aberto
Identifier DOI: 10.1103/PhysRevLett.118.117401
Address: https://journals.aps.org/prl/abstract/10.1103/PhysRevLett.118.117401
Date Issue: 2017
Appears in Collections:IFGW - Artigos e Outros Documentos

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