Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/344895
Type: Artigo
Title: Spin polarization of carriers in InGaAs self-assembled quantum rings inserted in GaAs-AlGaAs resonant tunneling devices
Author: Gordo, V. Orsi
Gobato, Y. Galvão
Galeti, H. V. A.
Brasil, M. J. S. P.
Taylor, D.
Henini, M.
Abstract: In this work, we have investigated transport and polarization resolved photoluminescence (PL) of n-type GaAs-AlGaAs resonant tunneling diodes (RTDs) containing a layer of InGaAs self-assembled quantum rings (QRs) in the quantum well (QW). All measurements were performed under applied voltage, magnetic fields up to 15 T and using linearly polarized laser excitation. It was observed that the QRs' PL intensity and the circular polarization degree (CPD) oscillate periodically with applied voltage under high magnetic fields at 2 K. Our results demonstrate an effective voltage control of the optical and spin properties of InGaAs QRs inserted into RTDs.
Subject: Anéis quânticos
Fotoluminescência
Quantum rings
Photoluminescence
Country: Estados Unidos
Editor: Springer
Rights: fechado
Identifier DOI: 10.1007/s11664-017-5391-2
Address: https://link.springer.com/article/10.1007/s11664-017-5391-2
Date Issue: 2017
Appears in Collections:IFGW - Artigos e Outros Documentos

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