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|Title:||Spin polarization of carriers in InGaAs self-assembled quantum rings inserted in GaAs-AlGaAs resonant tunneling devices|
|Author:||Gordo, V. Orsi|
Gobato, Y. Galvão
Galeti, H. V. A.
Brasil, M. J. S. P.
|Abstract:||In this work, we have investigated transport and polarization resolved photoluminescence (PL) of n-type GaAs-AlGaAs resonant tunneling diodes (RTDs) containing a layer of InGaAs self-assembled quantum rings (QRs) in the quantum well (QW). All measurements were performed under applied voltage, magnetic fields up to 15 T and using linearly polarized laser excitation. It was observed that the QRs' PL intensity and the circular polarization degree (CPD) oscillate periodically with applied voltage under high magnetic fields at 2 K. Our results demonstrate an effective voltage control of the optical and spin properties of InGaAs QRs inserted into RTDs.|
|Appears in Collections:||IFGW - Artigos e Outros Documentos|
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