Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/344693
Type: Artigo
Title: Fabrication and optical properties of strain-free self-assembled mesoscopic GaAs structures
Author: Silva, S. F. C. da
Mardegan, T.
Araújo, S. R. de
Ramirez, C. A. O.
Kiravittaya, S.
Couto Jr., O. D. D.
Iikawa, F.
Deneke, C.
Abstract: We use a combined process of Ga-assisted deoxidation and local droplet etching to fabricate unstrained mesoscopic GaAs/AlGaAs structures exhibiting a high shape anisotropy with a length up to 1.2 mu m and a width of 150 nm. We demonstrate good controllability over size and morphology of the mesoscopic structures by tuning the growth parameters. Our growth method yields structures, which are coupled to a surrounding quantum well and present unique optical emission features. Microscopic and optical analysis of single structures allows us to demonstrate that single structure emission originates from two different confinement regions, which are spectrally separated and show sharp excitonic lines. Photoluminescence is detected up to room temperature making the structures the ideal candidates for strain-free light emitting/detecting devices.
Subject: Pontos quânticos
Epitaxia por feixe molecular
Quantum dots
Molecular beam epitaxy
Country: Alemanha
Editor: Springer
Rights: aberto
Identifier DOI: 10.1186/s11671-016-1782-1
Address: https://nanoscalereslett.springeropen.com/articles/10.1186/s11671-016-1782-1
Date Issue: 2017
Appears in Collections:IFGW - Artigos e Outros Documentos

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