Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/342747
Type: Artigo
Title: Investigation of the quantum confinement anisotropy in a submonolayer quantum dot infrared photodetector
Author: Alzeidan, A.
Cantalice, T.F.D.
Garcia, A.J.
Deneke, C.F.
Quivy, A.A.
Abstract: A submonolayer quantum dot infrared photodetector (SML-QDIP) was grown on a GaAs(001) substrate by molecular beam epitaxy and processed using conventional optical lithography, wet etching and electronbeam metallization. Additionally, a side of the device was polished at 45 degrees in order to allow optical measurements with s-and p-polarized light. The electro-optical properties of the device were investigated both in normal incidence and at 45 degrees in order to study the quantum confinement of the SMLQD along the lateral and vertical directions. The s-to-p photocurrent ratio was found to be between 0.10 and 0.43, showing that, in this new type of quantum dot, the lateral confinement is still weaker than along the vertical direction, but is better than the one of conventional QDs fabricated in the Stranski-Krastanov growth mode. The maximum specific detectivity in normal incidence was 1.3 × 1011 cm Hz1/2/W at 30 K and 0.9V.
Subject: Anisotropia
Pontos quânticos
Country: Estados Unidos
Editor: Institute of Electrical and Electronics Engineers
Rights: Fechado
Identifier DOI: 10.1109/SBMicro.2019.8919349
Address: https://ieeexplore.ieee.org/document/8919349
Date Issue: 2019
Appears in Collections:IFGW - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
2-s2.0-85077205693.pdf299.16 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.