Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/342293
Type: Artigo
Title: Analysis of vias position on the BEOL temperature distribution
Author: Nunes, R.O.
Bohorquez, J.L.R.
De Orio, R.L.
Abstract: A study of the temperature distribution on the BEOL structure and its impact on the electromigration in a design environment has been developed and implemented. The study for a 45 nm technology indicated a large temperature variation from the local to the global interconnects, which should be considered for the EM-induced resistance increase of the line, in contrast to the standard analysis through a fixed operating temperature throughout the BEOL. The results show that a significant additional temperature above 30°C exists on the layers M1 to M11 due the power dissipated from transistors. The temperature reduction on the local layer is evaluated changing position and number of vias, both with a direct influence on the BEOL thermal distribution. The results show a reduction of temperature from 365 K to 358 K for M1 layer, considering a fraction volume of 6 % for vias distributed equally spaced with 2.4 μm.
Subject: Resistência elétrica
Temperatura
Editor: Institute of Electrical and Electronics Engineers
Rights: Fechado
Identifier DOI: 10.1109/LAED.2019.8714745
Address: https://ieeexplore.ieee.org/document/8714745
Date Issue: 2019
Appears in Collections:IG - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
2-s2.0-85067189650.pdf557.37 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.