Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/341067
Type: Artigo
Title: Study of electron transport in 4H-SiC by using nonequilibrium statistical ensemble formalism
Author: Vasconcelos, J. L.
Rodrigues, C. G.
Luzzi, R.
Abstract: A theoretical study, by using Nonequilibrium Statistical Ensemble Formalism (NESEF), on the nonlinear transport of electrons in the transient and steady state of n-doped 4H-SiC under the influence of high electric fields is presented. The electron drift velocity and the nonequilibrium temperature are obtained, and their dependence on the electric field applied in the orientation parallel or perpendicular to the c-axis is derived and analyzed.
Subject: Semicondutores
Elétrons - Transporte
Semiconductors
Electron transport
Country: Estados Unidos
Editor: Springer
Rights: fechado
Identifier DOI: 10.1007/s13538-019-00661-w
Address: https://link.springer.com/article/10.1007%2Fs13538-019-00661-w
Date Issue: 2019
Appears in Collections:IFGW - Artigos e Outros Documentos

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