Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/340988
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dc.contributor.CRUESPUNIVERSIDADE ESTADUAL DE CAMPINASpt_BR
dc.contributor.authorunicampDeneke, Christoph Friedrichpt_BR
dc.typeArtigopt_BR
dc.titleScanning tunneling measurements in membrane-based nanostructures: spatially-resolved quantum state analysis in postprocessed epitaxial systems for optoelectronic applicationspt_BR
dc.contributor.authorRosa, B. L. T.pt_BR
dc.contributor.authorParra-Murillo, C. A.pt_BR
dc.contributor.authorChagas, T.pt_BR
dc.contributor.authorGarcia, A. J.pt_BR
dc.contributor.authorGuimaraes, P. S. S.pt_BR
dc.contributor.authorDeneke, C.pt_BR
dc.contributor.authorMagalhaes-Paniago, R.pt_BR
dc.contributor.authorMalachias, A.pt_BR
dc.subjectMicroscopia de tunelamento de elétronspt_BR
dc.subjectNanomembranaspt_BR
dc.subjectPontos quânticospt_BR
dc.subjectScanning tunneling microscopypt_BR
dc.subjectNanomembranespt_BR
dc.subjectQuantum dotspt_BR
dc.description.abstractNanoscale heterostructure engineering is the main target for the development of optoelectronic devices. In this sense, a precise knowledge of local electronic response after materials processing is required to envisage technological applications. A number of local probe techniques that address single nanostructure signals were satisfactorily employed in semiconductor epitaxial systems. In this work we show that the use of chemically etched semiconductor nanomembranes allows carrying out scanning tunneling spectroscopy (STS) measurements in a postprocessed system which was otherwise studied mainly under in situ conditions that differ from the operational regime. We were able to acquire STS spectra with energy level resolved response on InAs quantum dots grown within a 15 nm-thick GaAs single-crystalline film transferred to an Au(111) surface. The presence of a native oxide layer does not affect the result, keeping the reliability of the usual ultra high vacuum (UHV) procedures. The use of nanomembranes also opens up the possibility of tailoring properties via additional variables such as nanomembrane thickness and surface charge depletion. Our method is applicable to a broad class of postprocessed layers extracted in nanomembrane format from epitaxial systems that are potential candidates for optoelectronic applications.pt_BR
dc.relation.ispartofACS applied nano materialspt_BR
dc.relation.ispartofabbreviationACS appl. nano mater.pt_BR
dc.publisher.cityWashington, WApt_BR
dc.publisher.countryEstados Unidospt_BR
dc.publisherAmerican Chemical Societypt_BR
dc.date.issued2019pt_BR
dc.date.monthofcirculationJulypt_BR
dc.language.isoengpt_BR
dc.description.volume2pt_BR
dc.description.issuenumber7pt_BR
dc.description.firstpage4655pt_BR
dc.description.lastpage4664pt_BR
dc.rightsfechadopt_BR
dc.sourceWOSpt_BR
dc.identifier.issnpt_BR
dc.identifier.eissn2574-0970pt_BR
dc.identifier.doi10.1021/acsanm.9b01124pt_BR
dc.identifier.urlhttps://pubs.acs.org/doi/10.1021/acsanm.9b01124pt_BR
dc.description.sponsorshipFAPEMIG - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE MINAS GERAISpt_BR
dc.description.sponsorshipCAPES - COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL E NÍVEL SUPERIORpt_BR
dc.description.sponsorshipFAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOpt_BR
dc.description.sponsorshipCNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOpt_BR
dc.description.sponsorship1FAPEMIG - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE MINAS GERAISpt_BR
dc.description.sponsorship1CAPES - COORDENAÇÃO DE APERFEIÇOAMENTO DE PESSOAL E NÍVEL SUPERIORpt_BR
dc.description.sponsorship1FAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOpt_BR
dc.description.sponsorship1CNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOpt_BR
dc.description.sponsordocumentnumberSem informaçãopt_BR
dc.description.sponsordocumentnumberSem informaçãopt_BR
dc.description.sponsordocumentnumber2016/14001-7pt_BR
dc.description.sponsordocumentnumber423962/2016-7pt_BR
dc.date.available2020-05-13T19:32:40Z-
dc.date.accessioned2020-05-13T19:32:40Z-
dc.description.provenanceMade available in DSpace on 2020-05-13T19:32:40Z (GMT). No. of bitstreams: 1 000477917700068.pdf: 2856755 bytes, checksum: 83ce8d40b535e20722ad7d7cffd5ca46 (MD5) Previous issue date: 2019en
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/340988-
dc.contributor.departmentDepartamento de Física Aplicadapt_BR
dc.contributor.unidadeInstituto de Física Gleb Wataghinpt_BR
dc.identifier.source000477917700068pt_BR
dc.creator.orcid0000-0002-8556-386Xpt_BR
dc.type.formArtigopt_BR
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