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dc.contributor.authorunicampAlvarez, Hugo da Silva-
dc.contributor.authorunicampSilva, Audrey Roberto-
dc.contributor.authorunicampDiniz, José Alexandre-
dc.titleHydrogenated amorphous silicon films deposited by electron cyclotron resonance chemical vapor deposition at room temperature with different radio frequency chuck powerspt_BR
dc.contributor.authorAlvarez, Hugo da S.-
dc.contributor.authorSilva, Audrey R.-
dc.contributor.authorCioldin, Frederico H.-
dc.contributor.authorEspindola, Luana C. J.-
dc.contributor.authorDiniz, Jose A.-
dc.subjectEspectroscopia Ramanpt_BR
dc.subject.otherlanguageRaman spectroscopypt_BR
dc.description.abstractIn this work, we present the morphological and electrical characterization of hydrogenated amorphous silicon-films, which were deposited at room temperature on a n(+)-type silicon substrate using the electron cyclotron resonance chemical vapor deposition (ECR-CVD) technique. To study the hydrogen incorporation into the films, radio-frequency (RF) chuck powers of 1 W, 3W and 5W in the silicon substrates were applied during the ECR-CVD depositions. The deposited films were p(+) doped using boron ion implantation (B+ I/I) and annealed at 1273 K, using a Rapid Thermal Annealing (RTA) process for dopant activation. The hydrogen concentration, the crystalline level, the surface roughness were obtained by, respectively, Fourier-transform infrared spectroscopy of the as-deposited films; Raman spectroscopy and atomic force microscopy of the films, after the B+ I/I and RTA. The Fourier-transform infrared and Raman spectra were deconvoluted as gaussian curves to extract the molecular bond concentration between silicon and hydrogen and their vibrational modes, respectively. These analyses indicated that: the H concentration is reduced with the increase of RF chuck powers, and, the films changed from totally amorphous to partially crystalline, respectively, when are compared the structures, before and after the B+ I/I and RTA. Diodes with three p(+) a-Si/n(++)c-Si structures were fabricated with aluminun electrodes and current-voltage curves were extracted, indicating that the devices, with films deposited with 5 W, presented the best results, with ideality factor of 1.1pt_BR
dc.relation.ispartofThin solid films: international journal on the science and technology of condensed matter filmspt_BR
dc.relation.ispartofabbreviationThin solid filmspt_BR
dc.publisher.countryPaíses Baixospt_BR
dc.description.provenanceSubmitted by Mariana Aparecida Azevedo ( on 2020-05-05T12:20:27Z No. of bitstreams: 0. Added 1 bitstream(s) on 2020-08-27T19:17:13Z : No. of bitstreams: 1 000490974900012.pdf: 3304813 bytes, checksum: c75cb18f57f70219f64103aa5283d201 (MD5)en
dc.description.provenanceMade available in DSpace on 2020-05-05T12:20:27Z (GMT). No. of bitstreams: 0 Previous issue date: 2019en
dc.contributor.departmentsem informaçãopt_BR
dc.contributor.departmentsem informaçãopt_BR
dc.contributor.departmentDepartamento de Semicondutores, Instrumentos e Fotônicapt_BR
dc.contributor.unidadeFaculdade de Engenharia Elétrica e de Computaçãopt_BR
dc.contributor.unidadeFaculdade de Engenharia Elétrica e de Computaçãopt_BR
dc.contributor.unidadeFaculdade de Engenharia Elétrica e de Computaçãopt_BR
dc.subject.keywordHydrogenated amorphous siliconpt_BR
dc.subject.keywordElectron cyclotron resonance chemical vapor deposition at room temperaturept_BR
dc.subject.keywordHydrogen concentration at amorphous silicon filmspt_BR
dc.subject.keywordBoron dopingpt_BR
dc.creator.orcidsem informaçãopt_BR
dc.creator.orcidsem informaçãopt_BR
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