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|Title:||Hydrogenated amorphous silicon films deposited by electron cyclotron resonance chemical vapor deposition at room temperature with different radio frequency chuck powers|
|Author:||Alvarez, Hugo da S.|
Silva, Audrey R.
Cioldin, Frederico H.
Espindola, Luana C. J.
Diniz, Jose A.
|Abstract:||In this work, we present the morphological and electrical characterization of hydrogenated amorphous silicon-films, which were deposited at room temperature on a n(+)-type silicon substrate using the electron cyclotron resonance chemical vapor deposition (ECR-CVD) technique. To study the hydrogen incorporation into the films, radio-frequency (RF) chuck powers of 1 W, 3W and 5W in the silicon substrates were applied during the ECR-CVD depositions. The deposited films were p(+) doped using boron ion implantation (B+ I/I) and annealed at 1273 K, using a Rapid Thermal Annealing (RTA) process for dopant activation. The hydrogen concentration, the crystalline level, the surface roughness were obtained by, respectively, Fourier-transform infrared spectroscopy of the as-deposited films; Raman spectroscopy and atomic force microscopy of the films, after the B+ I/I and RTA. The Fourier-transform infrared and Raman spectra were deconvoluted as gaussian curves to extract the molecular bond concentration between silicon and hydrogen and their vibrational modes, respectively. These analyses indicated that: the H concentration is reduced with the increase of RF chuck powers, and, the films changed from totally amorphous to partially crystalline, respectively, when are compared the structures, before and after the B+ I/I and RTA. Diodes with three p(+) a-Si/n(++)c-Si structures were fabricated with aluminun electrodes and current-voltage curves were extracted, indicating that the devices, with films deposited with 5 W, presented the best results, with ideality factor of 1.1|
|Appears in Collections:||FEEC - Artigos e Outros Documentos|
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