Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/338118
Type: Artigo
Title: Excitation mechanism of Tb3+ in a-Si3N4:H under sub-gap excitation
Author: Bosco, Giácomo B. F.
Khatami, Zahra
Wojcik, Jacek
Mascher, Peter
Tessler, Leandro Russovski
Abstract: We studied a sample of Tb-doped a-Si3N4:H prepared by electron cyclotron resonance plasma enhanced chemical vapor deposition (ECR PECVD). The sample has an optical gap E-04 = 4.7 +/- 0.3 eV and refractive index n (at 632 nm) = 1.81 +/- 0.01. Room temperature photoluminescence was measured under sub-gap excitation. Both characteristic a-Si3N4:H and Tb3+ photoluminescence peaks were detected in the sample as deposited. Annealing at 300 degrees C maximizes the Tb3+ photoluminescence lines. At higher annealing temperatures the Tb3+ photoluminescence decreases while the host photoluminescence increases. The Tb3+ photoluminescence is inversely correlated with the density of Si-H bonds in the sample. The results indicate that silicon dangling bonds are involved in the excitation of the Tb3+ ions. We propose a new efficient non-radiative recombination path to the static disorder model that explains the luminescence of amorphous silicon and alloys: the Auger excitation of a rare earth ion near a silicon dangling bond. The model provides a very good explanation of the excitation and does not require the presence of nanostructures.
Subject: Íons metálicos
Silício amorfo
Érbio
Country: Holanda
Editor: Elsevier
Rights: fechado
Identifier DOI: 10.1016/j.jlumin.2018.05.080
Address: https://www.sciencedirect.com/science/article/pii/S0022231317320847
Date Issue: 2018
Appears in Collections:IFGW - Artigos e Outros Documentos

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