Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/329290
Type: Congresso
Title: A Methodology To Identify Critical Interconnects Affected By Electromigration
Author: Nunes
R. O.; de Orio
R. L.
Abstract: Electromigration damage in interconnects is a well-known bottleneck of integrated circuits, as it is responsible for performance degradation, affecting parameters like delay, power and frequency. To guarantee a better performance for longer time, the chip designer needs to identify critical wires in the circuit layout and to alter it using techniques that retard the electromigration impact on the circuit. In this work, it is proposed a methodology to identify the critical lines due to the electromigration effect. This methodology is applied to evaluate the performance degradation of a ring oscillator.
Subject: Electromigration
Crtical Interconnect
Chip Reliability
Editor: IEEE
New York
Rights: fechado
Identifier DOI: 10.1109/SBMicro.2016.7731325
Address: http://ieeexplore.ieee.org/document/7731325/
Date Issue: 2016
Appears in Collections:Unicamp - Artigos e Outros Documentos

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