Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/329108
Type: Artigo
Title: Disorder Effect On The Anisotropic Resistivity Of Phosphorene Determined By A Tight-binding Model
Author: Paez
Carlos J.; DeLello
Kursti; Duy Le; Pereira
Ana L. C.; Mucciolo
Eduardo R.
Abstract: In this work we develop a compact multiorbital tight-binding model for phosphorene that accurately describes states near the main band gap. The model parameters are adjusted using as reference the band structure obtained by a density functional theory calculation with the hybrid HSE06 functional. We use the optimized tight-binding model to study the effects of disorder on the anisotropic transport properties of phosphorene. In particular, we evaluate how the longitudinal resistivity depends on the lattice orientation for two typical disorder models: dilute scatterers with high potential fluctuation amplitudes, mimicking screened charges in the substrate, and dense scatterers with lower amplitudes, simulating weakly bounded adsorbates. We show that the intrinsic anisotropy associated to the band structure of this material, although sensitive to the type and intensity of the disorder, is robust.
Subject: Layer Black Phosphorus
Augmented-wave Method
Single-crystals
Graphene
Semiconductor
Conductance
Passivation
Transistors
Mobility
Scheme
Editor: Amer Physical Soc
College Park, Maryland
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.94.165419
Address: https://journals.aps.org/prb/abstract/10.1103/PhysRevB.94.165419
Date Issue: 2016
Appears in Collections:Unicamp - Artigos e Outros Documentos

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