Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/328375
Type: Artigo
Title: Solid-vapor Reaction Growth Of Transition-metal Dichalcogenide Monolayers
Author: Li
Bo; Gong
Yongji; Hu
Zhili; Brunetto
Gustavo; Yang
Yingchao; Ye
Gonglan; Zhang
Zhuhua; Lei
Sidong; Jin
Zehua; Bianco
Elisabeth; Zhang
Xiang; Wang
Weipeng; Lou
Jun; Galvao
Douglas S.; Tang
Ming; Yakobson
Boris I.; Vajtai
Robert; Ajayan
Pulickel M.
Abstract: Two-dimensional (2D) layered semiconducting transition-metal dichalcogenides (TMDCs) are promising candidates for next-generation ultrathin, flexible, and transparent electronics. Chemical vapor deposition (CVD) is a promising method for their controllable, scalable synthesis but the growth mechanism is poorly understood. Herein, we present systematic studies to understand the CVD growth mechanism of monolayer MoSe2, showing reaction pathways for growth from solid and vapor precursors. Examination of metastable nanoparticles deposited on the substrate during growth shows intermediate growth stages and conversion of non-stoichiometric nanoparticles into stoichiometric 2D MoSe2 monolayers. The growth steps involve the evaporation and reduction of MoO3 solid precursors to sub-oxides and stepwise reactions with Se vapor to finally form MoSe2. The experimental results and proposed model were corroborated by abinitio Car-Parrinello molecular dynamics studies.
Subject: Chemical Vapor Deposition
Growth Mechanisms
Molybdenum Diselenide
Monolayers
Transition-metal Dichalcogenide
Editor: Wiley-V C H Verlag GMBH
Weinhem
Rights: fechado
Identifier DOI: 10.1002/anie.201604445
Address: http://onlinelibrary.wiley.com/doi/10.1002/anie.201604445/abstract
Date Issue: 2016
Appears in Collections:Unicamp - Artigos e Outros Documentos

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