Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/327204
Type: Artigo
Title: Ga+ Focused Ion Beam Lithography As A Viable Alternative For Multiple Fin Field Effect Transistor Prototyping
Author: Leonhardt
Alessandra; dos Santos
Marcos Vinicius Puydinger; Diniz
Jose Alexandre; Manera
Leandro Tiago; Lima
Lucas Petersen Barbosa
Abstract: A novel method for fast and flexible fin field effect transistor (FinFET) prototyping using a Ga+ focused ion beam is presented. The fin width and height control is explored, aiming for the successful fabrication of prototypes. This method results in fins with negligible Ga incorporation, when compared to traditional focused ion beam milling techniques. Our method for multiple fin FinFET prototyping enables advanced device fabrication and great flexibility regarding both the number of fins and fin width. Working FinFET prototypes have been fabricated using the proposed fin definition method, and the electrical characterization is discussed. (C) 2016 American Vacuum Society.
Subject: Gate
Leakage
Editor: American Institute of Physics
Melville
Rights: aberto
Identifier DOI: 10.1116/1.4963879
Address: http://avs.scitation.org/doi/abs/10.1116/1.4963879?journalCode=jvb
Date Issue: 2016
Appears in Collections:Unicamp - Artigos e Outros Documentos

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