Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/326420
Type: Artigo
Title: Germanium Nanoparticles Grown At Different Deposition Times For Memory Device Applications
Author: Mederos
M.; Mestanza
S. N. M.; Lang
R.; Doi
I.; Diniz
J. A.
Abstract: In the present work, circular Metal-Oxide-Semiconductor capacitors with 200 mu m of diameter and germanium (Ge) nanoparticles (NPs) embedded in the gate oxide are studied for memory applications. Optimal process parameters are investigated for Ge NPs growing by low pressure chemical vapor deposition at different deposition times. Photoluminescence measurements showed room-temperature size-dependent green-red region bands attributed to quantum confinement effects present in the NPs. High-frequency capacitance versus voltage measurements demonstrated the memory effects on the MOS structures due to the presence of Ge NPs in the gate oxide acting as discrete floating gates. Current versus voltage measurements confirmed the Fowler-Nordheim tunneling as the programming mechanism of the devices. (C) 2016 Elsevier B.V. All rights reserved.
Subject: Germanium Nanoparticles
Metal-oxide-semiconductor Structure
Nonvolatile Memory
Low-pressure Chemical Vapor Deposition
Fowler-nordheim Tunneling
Editor: Elsevier Science SA
Lausanne
Rights: fechado
Identifier DOI: 10.1016/j.tsf.2016.05.026
Address: http://www-sciencedirect-com.ez88.periodicos.capes.gov.br/science/article/pii/S0040609016301778
Date Issue: 2016
Appears in Collections:Unicamp - Artigos e Outros Documentos

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