Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/326364
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dc.contributor.CRUESPUNIVERSIDADE ESTADUAL DE CAMPINASpt_BR
dc.contributor.authorunicampHernández Rosales, Ernestopt_BR
dc.contributor.authorunicampCedeño, Enriquept_BR
dc.contributor.authorunicampGandra, Flávio César Guimarãespt_BR
dc.contributor.authorunicampMansanares, Antonio Manoelpt_BR
dc.typeArtigopt_BR
dc.titleThermoacoustic And Thermoreflectance Imaging Of Biased Integrated Circuits: Voltage And Temperature Mapsen
dc.titleThermoacoustic and thermoreflectance imaging of biased integrated circuits: voltage and temperature mapspt_BR
dc.contributor.authorHernández-Rosales, E.pt_BR
dc.contributor.authorCedeño, E.pt_BR
dc.contributor.authorHernandez-Wong, J.pt_BR
dc.contributor.authorRojas-Trigos, J. B.pt_BR
dc.contributor.authorMarin, E.pt_BR
dc.contributor.authorGandra, F. C. G.pt_BR
dc.contributor.authorMansanares, A. M.pt_BR
dc.subjectCircuitos integrados, Microeletrônica, Termoacústicapt_BR
dc.subject.otherlanguageIntegrated circuits, Microelectronics, Thermoacousticspt_BR
dc.description.abstractIn this work a combined thermoacoustic and thermoreflectance set-up was designed for imaging biased microelectronic circuits. In particular, it was used with polycrystalline silicon resistive tracks grown on a monocrystalline Si substrate mounted on a test chip. Thermoreflectance images, obtained by scanning a probe laser beam on the sample surface, clearly show the regions periodically heated by Joule effect, which are associated to the electric current distribution in the circuit. The thermoacoustic signal, detected by a pyroelectric/piezoelectric sensor beneath the chip, also discloses the Joule contribution of the whole sample. However, additional information emerges when a non-modulated laser beam is focused on the sample surface in a raster scan mode allowing imaging of the sample. The distribution of this supplementary signal is related to the voltage distribution along the circuit. Published by AIP Publishing.en
dc.description.abstractIn this work a combined thermoacoustic and thermoreflectance set-up was designed for imaging biased microelectronic circuits. In particular, it was used with polycrystalline silicon resistive tracks grown on a monocrystalline Si substrate mounted on a test chip. Thermoreflectance images, obtained by scanning a probe laser beam on the sample surface, clearly show the regions periodically heated by Joule effect, which are associated to the electric current distribution in the circuit. The thermoacoustic signal, detected by a pyroelectric/piezoelectric sensor beneath the chip, also discloses the Joule contribution of the whole sample. However, additional information emerges when a non-modulated laser beam is focused on the sample surface in a raster scan mode allowing imaging of the sample. The distribution of this supplementary signal is related to the voltage distribution along the circuit.pt_BR
dc.relation.ispartofApplied physics letterspt_BR
dc.relation.ispartofabbreviationAppl. phys. lett.pt_BR
dc.publisher.cityMelville, NYpt_BR
dc.publisher.countryEstados Unidospt_BR
dc.publisherAIP Publishingpt_BR
dc.date.issued2016pt_BR
dc.date.monthofcirculationJulypt_BR
dc.identifier.citationApplied Physics Letters. Amer Inst Physics, v. 109, p. , 2016.pt_BR
dc.language.isoengpt_BR
dc.description.volume109pt_BR
dc.description.issuenumber4pt_BR
dc.description.firstpage1pt_BR
dc.description.lastpage5pt_BR
dc.rightsabertopt_BR
dc.sourceWOSpt_BR
dc.identifier.issn0003-6951pt_BR
dc.identifier.eissn1077-3118pt_BR
dc.identifier.doi10.1063/1.4959828pt_BR
dc.identifier.urlhttps://aip.scitation.org/doi/10.1063/1.4959828pt_BR
dc.description.sponsorshipFAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOpt_BR
dc.description.sponsorshipCNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOpt_BR
dc.description.sponsorship1FAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOpt_BR
dc.description.sponsorship1CNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOpt_BR
dc.description.sponsordocumentnumberSem informaçãopt_BR
dc.description.sponsordocumentnumberSem informaçãopt_BR
dc.date.available2017-11-13T11:34:06Z-
dc.date.accessioned2017-11-13T11:34:06Z-
dc.description.provenanceMade available in DSpace on 2017-11-13T11:34:06Z (GMT). No. of bitstreams: 1 000381688900013.pdf: 1079715 bytes, checksum: 1c8fb642a8037de1deec72e089ce1f24 (MD5) Previous issue date: 2016 Bitstreams deleted on 2020-09-02T13:42:09Z: 000381688900013.pdf,. Added 1 bitstream(s) on 2020-09-02T13:46:25Z : No. of bitstreams: 1 000381688900013.pdf: 962224 bytes, checksum: 73fde81dc1077ba750f673365524b902 (MD5)en
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/326364-
dc.contributor.departmentSem informaçãopt_BR
dc.contributor.departmentDepartamento de Eletrônica Quânticapt_BR
dc.contributor.departmentDepartamento de Eletrônica Quânticapt_BR
dc.contributor.departmentDepartamento de Eletrônica Quânticapt_BR
dc.contributor.unidadeInstituto de Física Gleb Wataghinpt_BR
dc.contributor.unidadeInstituto de Física Gleb Wataghinpt_BR
dc.contributor.unidadeInstituto de Física Gleb Wataghinpt_BR
dc.contributor.unidadeInstituto de Física Gleb Wataghinpt_BR
dc.identifier.source000381688900013pt_BR
dc.creator.orcidSem informaçãopt_BR
dc.creator.orcid0000-0002-3755-7940pt_BR
dc.creator.orcid0000-0002-7630-7856pt_BR
dc.creator.orcid0000-0001-7096-1948pt_BR
dc.type.formArtigopt_BR
dc.identifier.articleid041902pt_BR
dc.description.sponsorNoteThe authors acknowledge the Brazilian agencies FAPESP, CNPq, and FAEPEX-Unicamp, as well as CONACYT, México, for financial support. This work was supported by research Grant Nos. SIP-IPN-20150390, 20160144, and CONACyT-2011-01-174247. The support of COFAA-IPN through the SIBE and BEIFI Programs is also greatly acknowledged.pt_BR
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