Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/326159
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dc.contributor.CRUESPUNIVERSIDADE DE ESTADUAL DE CAMPINASpt_BR
dc.contributor.authoremailyara@df.ufscar.brpt_BR
dc.typeArtigopt_BR
dc.titleHole Spin Injection From A Gamnas Layer Into Gaas-alas-ingaas Resonant Tunneling Diodesen
dc.contributor.authorRodriguespt_BR
dc.contributor.authorD. H.; Brasilpt_BR
dc.contributor.authorM. J. S. P.; Orlitapt_BR
dc.contributor.authorM.; Kuncpt_BR
dc.contributor.authorJ.; Galetipt_BR
dc.contributor.authorH. V. A.; Heninipt_BR
dc.contributor.authorM.; Taylorpt_BR
dc.contributor.authorD.; Galvao Gobatopt_BR
dc.contributor.authorY.pt_BR
unicamp.author[Brasil, M. J. S. P.] Univ Estadual Campinas, Inst Fis Gleb Wataghin, BR-13083970 Campinas, SP, Brazilpt_BR
unicamp.author.external[Rodrigues, D. H.pt_BR
unicamp.author.externalGalvao Gobato, Y.] Univ Fed Sao Carlos, Dept Fis, BR-13560905 Sao Carlos, SP, Brazilpt_BR
unicamp.author.external[Orlita, M.] CNRS UJF UPS INSA, Lab Natl Champs Magnet Intenses, 25 Ave Martyrs, F-38042 Grenoble, Francept_BR
unicamp.author.external[Orlita, M.pt_BR
unicamp.author.externalKunc, J.] Charles Univ Prague, Inst Phys, Ke Karlovu 5, CR-12116 Prague 2, Czech Republicpt_BR
unicamp.author.external[Galeti, H. V. A.] Univ Fed Sao Carlos, Dept Engn Eletr, BR-13560905 Sao Carlos, SP, Brazilpt_BR
unicamp.author.external[Henini, M.pt_BR
unicamp.author.externalTaylor, D.] Univ Nottingham, Sch Phys & Astron, Nottingham Nanotechnol & Nanosci Ctr, Nottingham NG7 2RD, Englandpt_BR
unicamp.author.external[Rodrigues, D. H.] Inst Fed Educ Ciencia & Tecnol Sergipe, BR-49400000 Lagarto, SE, Brazilpt_BR
dc.subjectResonant Tunnelingen
dc.subjectElectroluminescenceen
dc.subjectGamnasen
dc.subjectSpintronicsen
dc.description.abstractWe have investigated the polarization-resolved electroluminescence (EL) of a p-i-n GaAs/AlAs/InGaAs resonant tunneling diode (RTD) containing a GaMnAs (x = 5%) spin injector under high magnetic fields. We demonstrate that under hole resonant tunneling condition, the GaMnAs contact acts as an efficient spin-polarized source for holes tunneling through the device. Polarization degrees up to 80% were observed in the device around the hole resonance at 2 K under 15 T. Our results could be valuable for improving the hole-spin injection in GaMnAs-based spintronic devices.en
dc.relation.ispartofJournal of Physics D-applied Physicspt_BR
dc.publisherIOP Publishing Ltdpt_BR
dc.publisherBristolpt_BR
dc.date.issued2016pt_BR
dc.date.monthofcirculationabrpt_BR
dc.identifier.citationJournal Of Physics D-applied Physics. Iop Publishing Ltd, v. 49, p. , 2016.pt_BR
dc.language.isoEnglishpt_BR
dc.description.volume49pt_BR
dc.description.issuenumber16pt_BR
dc.rightsfechadopt_BR
dc.sourceWOSpt_BR
dc.identifier.issn0022-3727pt_BR
dc.identifier.eissn1361-6463pt_BR
dc.identifier.wosidWOS:000373622900012pt_BR
dc.identifier.doi10.1088/0022-3727/49/16/165104pt_BR
dc.identifier.urlhttp://iopscience.iop.org.ez88.periodicos.capes.gov.br/article/10.1088/0022-3727/49/16/165104/metapt_BR
dc.description.sponsorshipFAPESP [2012/24055-6, 2014/50513-7]pt_BR
dc.description.sponsorshipCNPqpt_BR
dc.description.sponsorshipUK Engineering and Physical Sciences Research Councilpt_BR
dc.description.sponsorshipEuroMagNET IIpt_BR
dc.description.sponsorshipCAPESpt_BR
dc.description.sponsorship1Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)pt_BR
dc.description.sponsorship1Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)pt_BR
dc.description.sponsorship1Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES)pt_BR
dc.date.available2017-11-13T11:32:54Z-
dc.date.accessioned2017-11-13T11:32:54Z-
dc.description.provenanceMade available in DSpace on 2017-11-13T11:32:54Z (GMT). No. of bitstreams: 1 000373622900012.pdf: 684973 bytes, checksum: ee2b1f9c63ffadd87f54c06fae0a5858 (MD5) Previous issue date: 2016en
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/326159-
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