Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/326159
Type: Artigo
Title: Hole Spin Injection From A Gamnas Layer Into Gaas-alas-ingaas Resonant Tunneling Diodes
Hole spin injection from a GaMnAs layer into GaAs-AlAs-InGaAs resonant tunneling diodes
Author: Rodrigues, D. H.
Brasil, M. J. S. P.
Orlita, M.
Kunc, J.
Galeti, H. V. A.
Henini, M.
Taylor, D.
Gobato, Y. Galvão
Abstract: We have investigated the polarization-resolved electroluminescence (EL) of a p-i-n GaAs/AlAs/InGaAs resonant tunneling diode (RTD) containing a GaMnAs (x = 5%) spin injector under high magnetic fields. We demonstrate that under hole resonant tunneling condition, the GaMnAs contact acts as an efficient spin-polarized source for holes tunneling through the device. Polarization degrees up to 80% were observed in the device around the hole resonance at 2 K under 15 T. Our results could be valuable for improving the hole-spin injection in GaMnAs-based spintronic devices.
We have investigated the polarization-resolved electroluminescence (EL) of a p-i-n GaAs/AlAs/InGaAs resonant tunneling diode (RTD) containing a GaMnAs (x = 5%) spin injector under high magnetic fields. We demonstrate that under hole resonant tunneling condition, the GaMnAs contact acts as an efficient spin-polarized source for holes tunneling through the device. Polarization degrees up to 80% were observed in the device around the hole resonance at 2 K under 15 T. Our results could be valuable for improving the hole-spin injection in GaMnAs-based spintronic devices.
Subject: Resonant Tunneling
Electroluminescence
Gamnas
Spintronics
Eletroluminescência, Spintrônica
Country: Reino Unido
Editor: Institute of Physics Publishing
Citation: Journal Of Physics D-applied Physics. Iop Publishing Ltd, v. 49, p. , 2016.
Rights: fechado
Identifier DOI: 10.1088/0022-3727/49/16/165104
Address: https://iopscience.iop.org/article/10.1088/0022-3727/49/16/165104/meta
Date Issue: 2016
Appears in Collections:IFGW - Artigos e Outros Documentos

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