Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/326159
Type: Artigo
Title: Hole Spin Injection From A Gamnas Layer Into Gaas-alas-ingaas Resonant Tunneling Diodes
Author: Rodrigues
D. H.; Brasil
M. J. S. P.; Orlita
M.; Kunc
J.; Galeti
H. V. A.; Henini
M.; Taylor
D.; Galvao Gobato
Y.
Abstract: We have investigated the polarization-resolved electroluminescence (EL) of a p-i-n GaAs/AlAs/InGaAs resonant tunneling diode (RTD) containing a GaMnAs (x = 5%) spin injector under high magnetic fields. We demonstrate that under hole resonant tunneling condition, the GaMnAs contact acts as an efficient spin-polarized source for holes tunneling through the device. Polarization degrees up to 80% were observed in the device around the hole resonance at 2 K under 15 T. Our results could be valuable for improving the hole-spin injection in GaMnAs-based spintronic devices.
Subject: Resonant Tunneling
Electroluminescence
Gamnas
Spintronics
Editor: IOP Publishing Ltd
Bristol
Rights: fechado
Identifier DOI: 10.1088/0022-3727/49/16/165104
Address: http://iopscience.iop.org.ez88.periodicos.capes.gov.br/article/10.1088/0022-3727/49/16/165104/meta
Date Issue: 2016
Appears in Collections:Unicamp - Artigos e Outros Documentos

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