Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/320591
Type: Artigo de Periódico
Title: Optical Phonon Modulation In Semiconductors By Surface Acoustic Waves
Author: Iikawa
F; Hernandez-Minguez
A; Ramsteiner
M; Santos
PV
Abstract: We investigate the modulation of optical phonons in semiconductor crystals by a surface acoustic wave (SAW) propagating on the crystal surface. The SAW fields induce changes on the order of 10(-3) in the time-averaged Raman peak intensity by optical phonons in Si and GaN crystals. The SAW-induced modifications in the intensity of the Raman lines are dominated by the modulation of the longitudinal optical (LO) phonon energy by the SAW strain field. We show that while the strain field of the excited Rayleigh SAWs changes the LO phonon energy, it does not mix it with the transversal optical modes. In addition to the previous contribution, which is of a local character, the experiments give evidence for a weaker and nonlocal contribution attributed to the spatial variation of the SAW strain field. The latter activates optical modes with large wave vectors and, therefore, lower energies. The experimental results, which are well described by theoretical models for the two contributions, prove that optical phonons can be manipulated by SAWs with mu m wavelengths.
Subject: Raman-scattering
Gaas
Gan
Superlattices
Confinement
Dispersion
Diamond
Silicon
Aln
Editor: AMER PHYSICAL SOC
Citation: Physical Review B. AMER PHYSICAL SOC, n. 93, n. 19, p. .
Rights: fechado
Identifier DOI: 10.1103/PhysRevB.93.195212
Address: http://journals.aps.org/prb/abstract/10.1103/PhysRevB.93.195212
Date Issue: 2016
Appears in Collections:Unicamp - Artigos e Outros Documentos

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