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dc.contributor.CRUESPUNIVERSIDADE DE ESTADUAL DE CAMPINASpt_BR
dc.identifier.isbn2469-9969pt
dc.typeArtigo de Periódicopt_BR
dc.titleUnusual Kondo-hole Effect And Crystal-field Frustration In Nd-doped Cerhin5pt_BR
dc.contributor.authorRosapt_BR
dc.contributor.authorPFS; Oostrapt_BR
dc.contributor.authorA; Thompsonpt_BR
dc.contributor.authorJD; Pagliusopt_BR
dc.contributor.authorPG; Fiskpt_BR
dc.contributor.authorZpt_BR
dc.subjectResistancept_BR
dc.subjectLatticept_BR
dc.description.abstractWe investigate single crystals of Ce1-xNdxRhIn5 by means of x-ray-diffraction, microprobe, magnetic susceptibility, heat capacity, and electrical resistivity measurements. Our data reveal that the antiferromagnetic transition of CeRhIn5, at T-N(Ce) = 3.8 K, is linearly suppressed with x(Nd). We associate this effect with the presence of a "Kondo hole" created by Nd substitution. The extrapolation of T-N(Ce) to zero temperature, however, occurs at x(c) similar to 0.3, which is below the two-dimensional percolation limit found in Ce1-xLaxRhIn5. This result strongly suggests the presence of a crystal-field induced magnetic frustration. Near x(Nd) similar to 0.2, the Ising antiferromagnetic order from Nd3+ ions is stabilized and T-N(Nd) increases up to 11 K in NdRhIn5. Our results shed light on the effects of magnetic doping in heavy-fermion antiferromagnets and stimulate the study of such systems under applied pressure.en
dc.relation.ispartofPhysical Review Bpt_BR
dc.publisher.cityCOLLEGE PKpt_BR
dc.publisherAMER PHYSICAL SOCpt_BR
dc.date.issued2016pt_BR
dc.identifier.citationPhysical Review B. AMER PHYSICAL SOC, n. 94, n. 4, p. .pt_BR
dc.language.isoEnglishpt_BR
dc.description.volume94pt_BR
dc.rightsfechadopt_BR
dc.sourceWOSpt_BR
dc.identifier.issn2469-9950pt_BR
dc.identifier.wosidWOS:000379718700004pt_BR
dc.identifier.doi10.1103/PhysRevB.94.045101pt_BR
dc.identifier.urlhttp://journals.aps.org/prb/abstract/10.1103/PhysRevB.94.045101pt_BR
dc.description.sponsorshipU.S. Department of Energy, Office of Basic Energy Sciences, Division of Materials Science and Engineeringpt_BR
dc.description.sponsorshipLANL LDRD programpt_BR
dc.description.sponsorshipFAPESP [2013/20181-0, 2012/04870-7]pt_BR
dc.description.sponsorshipCNPq [442230/2014-1, 304649/2013-9]pt_BR
dc.description.sponsorship1Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)pt_BR
dc.description.sponsorship1Conselho Nacional de Desenvolvimento Científico e Tecnológico (CNPq)pt_BR
dc.date.available2016-12-06T18:32:37Z-
dc.date.accessioned2016-12-06T18:32:37Z-
dc.description.provenanceMade available in DSpace on 2016-12-06T18:32:37Z (GMT). No. of bitstreams: 0 Previous issue date: 2016en
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/320590-
Appears in Collections:Unicamp - Artigos e Outros Documentos

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