Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/320528
Type: Artigo de Periódico
Title: Optically Controlled Spin-polarization Memory Effect On Mn Delta-doped Heterostructures
Author: Balanta
MAG; Brasil
MJSP; Iikawa
F; Mendes
UC; Brum
JA; Danilov
YA; Dorokhin
MV; Vikhrova
OV; Zvonkov
BN
Abstract: ( We investigated the dynamics of the interaction between spin-polarized photo-created carriers and Mn ions on InGaAs/GaAs: Mn structures. The carriers are confined in an InGaAs quantum well and the Mn ions come from a Mn delta-layer grown at the GaAs barrier close to the well. Even though the carriers and the Mn ions are spatially separated, the interaction between them is demonstrated by time-resolved spin-polarized photoluminescence measurements. Using a pre-pulse laser excitation with an opposite circular-polarization clearly reduces the polarization degree of the quantum-well emission for samples where a strong magnetic interaction is observed. The results demonstrate that the Mn ions act as a spin-memory that can be optically controlled by the polarization of the photocreated carriers. On the other hand, the spin-polarized Mn ions also affect the spin-polarization of the subsequently created carriers as observed by their spin relaxation time. These effects fade away with increasing time delays between the pulses as well as with increasing temperatures.
Editor: NATURE PUBLISHING GROUP
Rights: aberto
Identifier DOI: 10.1038/srep24537
Address: http://www-nature-com.ez88.periodicos.capes.gov.br/articles/srep24537
Date Issue: 2016
Appears in Collections:Unicamp - Artigos e Outros Documentos

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