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|Type:||Artigo de Periódico|
|Title:||Optically Controlled Spin-polarization Memory Effect On Mn Delta-doped Heterostructures|
|Abstract:||( We investigated the dynamics of the interaction between spin-polarized photo-created carriers and Mn ions on InGaAs/GaAs: Mn structures. The carriers are confined in an InGaAs quantum well and the Mn ions come from a Mn delta-layer grown at the GaAs barrier close to the well. Even though the carriers and the Mn ions are spatially separated, the interaction between them is demonstrated by time-resolved spin-polarized photoluminescence measurements. Using a pre-pulse laser excitation with an opposite circular-polarization clearly reduces the polarization degree of the quantum-well emission for samples where a strong magnetic interaction is observed. The results demonstrate that the Mn ions act as a spin-memory that can be optically controlled by the polarization of the photocreated carriers. On the other hand, the spin-polarized Mn ions also affect the spin-polarization of the subsequently created carriers as observed by their spin relaxation time. These effects fade away with increasing time delays between the pulses as well as with increasing temperatures.|
|Editor:||NATURE PUBLISHING GROUP|
|Citation:||Scientific Reports. NATURE PUBLISHING GROUP, n. 6, n. 24537, p. .|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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