Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/320428
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dc.contributor.CRUESPUNIVERSIDADE DE ESTADUAL DE CAMPINASpt_BR
dc.identifier.isbn1748-3395pt
dc.typeArtigo de Periódicopt_BR
dc.titleSurface Functionalization Of Two-dimensional Metal Chalcogenides By Lewis Acid-base Chemistrypt_BR
dc.contributor.authorLeipt_BR
dc.contributor.authorSD; Wangpt_BR
dc.contributor.authorXF; Lipt_BR
dc.contributor.authorB; Kangpt_BR
dc.contributor.authorJH; Hept_BR
dc.contributor.authorYM; Georgept_BR
dc.contributor.authorA; Gept_BR
dc.contributor.authorLH; Gongpt_BR
dc.contributor.authorYJ; Dongpt_BR
dc.contributor.authorP; Jinpt_BR
dc.contributor.authorZH; Brunettopt_BR
dc.contributor.authorG; Chenpt_BR
dc.contributor.authorWB; Linpt_BR
dc.contributor.authorZT; Bainespt_BR
dc.contributor.authorR; Galvaopt_BR
dc.contributor.authorDS; Loupt_BR
dc.contributor.authorJ; Barrerapt_BR
dc.contributor.authorE; Banerjeept_BR
dc.contributor.authorK; Vajtaipt_BR
dc.contributor.authorR; Ajayanpt_BR
dc.contributor.authorPpt_BR
unicamp.author.emailkaustav@ece.ucsb.edu; robert.vajtai@rice.edu; ajayan@rice.edupt_BR
dc.subjectP-n-junctionspt_BR
dc.subjectEnergy-conversionpt_BR
dc.subjectMos2pt_BR
dc.subjectDichalcogenidept_BR
dc.subjectTransistorspt_BR
dc.subjectEfficiencypt_BR
dc.subjectDiodespt_BR
dc.subjectEdgept_BR
dc.subjectInsept_BR
dc.subjectGaspt_BR
dc.description.abstractPrecise control of the electronic surface states of two-dimensional (2D) materials could improve their versatility and widen their applicability in electronics and sensing. To this end, chemical surface functionalization has been used to adjust the electronic properties of 2D materials. So far, however, chemical functionalization has relied on lattice defects and physisorption methods that inevitably modify the topological characteristics of the atomic layers. Here we make use of the lone pair electrons found in most of 2D metal chalcogenides and report a functionalization method via a Lewis acid-base reaction that does not alter the host structure. Atomic layers of n-type InSe react with Ti4+ to form planar p-type [Ti4+ (n)(InSe)] coordination complexes. Using this strategy, we fabricate planar p-n junctions on 2D InSe with improved rectification and photovoltaic properties, without requiring heterostructure growth procedures or device fabrication processes. We also show that this functionalization approach works with other Lewis acids (such as B3+, Al3+ and Sn4+) and can be applied to other 2D materials (for example MoS2, MoSe2). Finally, we show that it is possible to use Lewis acid-base chemistry as a bridge to connect molecules to 2D atomic layers and fabricate a proof-of-principle dye-sensitized photosensing device.en
dc.relation.ispartofNature Nanotechnologypt_BR
dc.publisher.cityLONDONpt_BR
dc.publisherNATURE PUBLISHING GROUPpt_BR
dc.date.issued2016pt_BR
dc.identifier.citationNature Nanotechnology. NATURE PUBLISHING GROUP, n. 11, n. 5, p. 465 - 471.pt_BR
dc.language.isoEnglishpt_BR
dc.description.volume11pt_BR
dc.description.firstpage465pt_BR
dc.description.lastpage471pt_BR
dc.rightsfechadopt_BR
dc.sourceWOSpt_BR
dc.identifier.issn1748-3387pt_BR
dc.identifier.wosidWOS:000376163300018pt_BR
dc.identifier.doi10.1038/NNANO.2015.323pt_BR
dc.identifier.urlhttp://www.nature.com/nnano/journal/v11/n5/abs/nnano.2015.323.htmlpt_BR
dc.description.sponsorshipFAME, one of six centres of STARnet, a Semiconductor Research Corporation program - MARCOpt_BR
dc.description.sponsorshipDARPApt_BR
dc.description.sponsorshipMURI ARO program [W911NF-11-1-0362]pt_BR
dc.description.sponsorshipAir Force Office of Scientific Research [FA9550-14-1-0268]pt_BR
dc.description.sponsorshipCenter for Computational Engineering and Sciences at Unicamp through the FAPESP/CEPID grant [2013/08293-7]pt_BR
dc.description.sponsorship1Fundação de Amparo à Pesquisa do Estado de São Paulo (FAPESP)pt_BR
dc.date.available2016-12-06T18:32:01Z-
dc.date.accessioned2016-12-06T18:32:01Z-
dc.description.provenanceMade available in DSpace on 2016-12-06T18:32:01Z (GMT). No. of bitstreams: 1 000376163300018.pdf: 4930361 bytes, checksum: aa72b7879592bb849dc45079f4f5128b (MD5) Previous issue date: 2016en
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/320428-
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